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Lee, Zonghoon
Atomic-Scale Electron Microscopy Lab.
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Quantum-dot light-emitting diodes utilizing CdSe/ZnS nanocrystals embedded in TiO(2) thin film

Author(s)
Kang, Seung-HeeKumar, Ch. KiranLee, ZonghoonKim, Kyung-HyunHuh, ChulKim, Eui-Tae
Issued Date
2008-11
DOI
10.1063/1.3028070
URI
https://scholarworks.unist.ac.kr/handle/201301/5025
Fulltext
http://www.scopus.com/inward/record.url?partnerID=HzOxMe3b&scp=56249105080
Citation
APPLIED PHYSICS LETTERS, v.93, no.19, pp.1 - 3
Abstract
Quantum-dot (QD) light-emitting diodes (LEDs) are demonstrated on Si wafers by embedding core-shell CdSe/ZnS nanocrystals in TiO(2) thin films via plasma-enhanced metallorganic chemical vapor deposition. The n-TiO(2)/QDs/p-Si LED devices show typical p-n diode current-voltage and efficient electroluminescence characteristics, which are critically affected by the removal of QD surface ligands. The TiO(2)/QDs/Si system we presented can offer promising Si-based optoelectronic and electronic device applications utilizing numerous nanocrystals synthesized by colloidal solution chemistry.
Publisher
AMER INST PHYSICS
ISSN
0003-6951
Keyword (Author)
cadmium compoundselectroluminescent deviceselemental semiconductorsII-VI semiconductorslight emitting diodesMOCVDnanostructured materialsplasma CVDp-n junctionsquantum well devicessemiconductor materialssemiconductor quantum dotssemiconductor thin filmssilicontitanium compoundswide band gap semiconductorszinc compounds
Keyword
SEMICONDUCTOR NANOCRYSTALELECTROLUMINESCENCEPOLYMER

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