Reversible transition of volatile to non-volatile resistive switching and compliance current-dependent multistate switching in IGZO/MnO RRAM devices

Abstract

A controllable and reversible transition of volatile and non-volatile resistive switching is presented in Ag/indium-gallium-zinc oxide (IGZO)/manganese oxide (MnO)/Pt bilayer resistive memory devices. The coexistence of volatile and non-volatile switching characteristics was demonstrated by controlling the current compliance during the SET process. With lower current compliance (<50 mu A), the formation of an unstable conducting filament presented typical diode-like non-volatile switching. A reversible transition from volatile to non-volatile switching could be obtained by applying a higher current compliance (>= 50 mu A). Moreover, highly uniform multistate memory characteristics were achieved by modulating the current compliance in the non-volatile switching region. The coexistence of volatile and multistate non-volatile resistive switching behaviors with a reversible transition demonstrates the capability of developing a selector element for crossbar arrays and the application for next generation multistate high-density storage with the same Ag/IGZO/MnO/Pt device.