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Author

Choi, Jaehyouk
Integrated Circuits and Systems Lab (ICSL)
Research Interests
  • RF/Analog/Mixed IC design, low power CMOS IC, wired/wireless TRX IC, clock generation IC

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A wideband dual-mode LC-VCO with a switchable gate-biased active core

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Title
A wideband dual-mode LC-VCO with a switchable gate-biased active core
Author
Yoon, HeeinLee, YongsunKim, Jae JoonChoi, Jaehyouk
Keywords
Active core; gate bias; inductance-capacitance ($LC$) voltage-controlled oscillator (VCO); transconductance; wideband
Issue Date
201405
Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
Citation
IEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS II-EXPRESS BRIEFS, v.61, no.5, pp.289 - 293
Abstract
A wideband inductance-capacitance voltage-controlled oscillator (VCO) with a gm-switching technique was designed and fabricated in the 65-nm CMOS process. With a switchable secondary gate-biased active core and a primary core, the VCO operates in two different modes. In the LF mode, in which switches turn on the secondary core, the increased start-up gain facilitates LF oscillation. In the HF mode, in which the switches isolate the secondary core from the primary core, the reduced capacitive loading allows for HF oscillation. In addition, since the gate bias of the secondary core transistors guarantees the high transconductance of the secondary core, the switch size can be minimized, which further extends the upper boundary of the oscillation frequency. The VCO achieved a 41\% frequency range, i.e., 3.36-5.1 GHz, and a phase noise of-123.1 dBc/Hz at an offset of 1 MHz from an output frequency of 4.21 GHz. The active silicon area was 0.24 mm2, and the power consumption was 8.7 mW at 5 GHz.
URI
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DOI
http://dx.doi.org/10.1109/TCSII.2014.2305216
ISSN
1549-7747
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ECE_Journal Papers

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