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김봉수

Kim, BongSoo
Polymer & Organic Semiconductor Lab.
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dc.citation.endPage 18747 -
dc.citation.number 16 -
dc.citation.startPage 18739 -
dc.citation.title ACS APPLIED MATERIALS & INTERFACES -
dc.citation.volume 12 -
dc.contributor.author Min, Honggi -
dc.contributor.author Kang, Boseok -
dc.contributor.author Shin, Yo Seob -
dc.contributor.author Kim, BongSoo -
dc.contributor.author Lee, Seung Woo -
dc.contributor.author Cho, Jeong Ho -
dc.date.accessioned 2023-12-21T17:41:26Z -
dc.date.available 2023-12-21T17:41:26Z -
dc.date.created 2020-05-25 -
dc.date.issued 2020-04 -
dc.description.abstract A suitable insulating polymer material that is compatible with the fabrication process of organic transistors and has excellent electrical properties is critically required for the next-generation flexible organic electronics. In this study, using a one-step polymerization method, we synthesized two different solution-processable polyimides (PIs) incorporated with abundant trifluoromethyl groups. Not only were the two resulting PIs.termed 6FDA-6FDAM-PI and 6FDA-TFMB-PI.well soluble in organic solvents, but also they showed transparent and colorless optical properties. The fluorinated PI films showed smooth surface topographies and surface energy values that were appropriate for their use in bottom-gate organic transistors. Organic transistors separately fabricated with 6FDA-6FDAM-PI and 6FDA-TFMB-PI as the gate insulators showed excellent device performance and electrical stability under various testing conditions, especially for pentacene-based devices. The excellent performance of the devices with fluorinated PIs was attributed to the enhanced microstructure of the organic semiconductor and the fluorine-rich characteristic of the underlying gate insulator. Furthermore, organic complementary circuits including the basic logic gates of NOT, NOR, and NAND were demonstrated using these devices. -
dc.identifier.bibliographicCitation ACS APPLIED MATERIALS & INTERFACES, v.12, no.16, pp.18739 - 18747 -
dc.identifier.doi 10.1021/acsami.9b23318 -
dc.identifier.issn 1944-8244 -
dc.identifier.scopusid 2-s2.0-85084027543 -
dc.identifier.uri https://scholarworks.unist.ac.kr/handle/201301/49529 -
dc.identifier.url https://pubs.acs.org/doi/10.1021/acsami.9b23318 -
dc.identifier.wosid 000529202100057 -
dc.language 영어 -
dc.publisher AMER CHEMICAL SOC -
dc.title Transparent and Colorless Polyimides Containing Multiple Trifluoromethyl Groups as Gate Insulators for Flexible Organic Transistors with Superior Electrical Stability -
dc.type Article -
dc.description.isOpenAccess FALSE -
dc.relation.journalWebOfScienceCategory Nanoscience & Nanotechnology; Materials Science, Multidisciplinary -
dc.relation.journalResearchArea Science & Technology - Other Topics; Materials Science -
dc.type.docType Article -
dc.description.journalRegisteredClass scie -
dc.description.journalRegisteredClass scopus -
dc.subject.keywordAuthor fluorinated polyimide -
dc.subject.keywordAuthor organic transistor -
dc.subject.keywordAuthor gate insulator -
dc.subject.keywordAuthor bias stability -
dc.subject.keywordAuthor charge trap -
dc.subject.keywordPlus FIELD-EFFECT TRANSISTORS -
dc.subject.keywordPlus HIGH-PERFORMANCE -
dc.subject.keywordPlus BIAS STABILITY -
dc.subject.keywordPlus POLYMER -
dc.subject.keywordPlus DIELECTRICS -
dc.subject.keywordPlus FILMS -
dc.subject.keywordPlus HYSTERESIS -
dc.subject.keywordPlus TIME -
dc.subject.keywordPlus AIR -

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