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Choi, Kyoung Jin
Energy Conversion Materials (EcoMAT) Lab
Research Interests
  • Solar cells, thermoelectrics, piezoelectric

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Non-lithographic growth of core-shell GaAs nanowires on Si for optoelectronic applications

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Title
Non-lithographic growth of core-shell GaAs nanowires on Si for optoelectronic applications
Author
Bae, Myung-HoKim, Bum-KyuHa, Dong-HanLee, Sang JunSharma, RahulChoi, Kyoung JinKim, Ju-JinChoi, Won JunShin, Jae Cheol
Keywords
SILICON NANOWIRES; PERFORMANCE; PHOTONICS; EPITAXY; ELECTRONICS; ARRAYS
Issue Date
201404
Publisher
AMER CHEMICAL SOC
Citation
CRYSTAL GROWTH & DESIGN, v.14, no.4, pp.1510 - 1515
Abstract
We demonstrated a nonlithographic method for integrating GaAs nanowire (NW) array-based light-emitting diodes (LEDs) on silicon (Si) substrates. A sub-100 nm hole array on a deposited SiO2 layer was patterned on an entire 2 in. Si wafer based on a sacrificed self-assembled InAs NW array. Then, a core-shell n-p junction GaAs NW array was grown on exposed Si windows via the selective-area growth method. The electrical properties of the core-shell n-p junction GaAs NW has been measured and compared to those of the core-shell junction NWs formed via the self-assembled growth method. Room temperature electroluminescence was successfully observed from the fabricated GaAs NW array-based LEDs. The core-shell junction III-V NW array epitaxially grown on a ubiquitous Si platform could be applied to future low-cost optical devices.
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DOI
http://dx.doi.org/10.1021/cg401520q
ISSN
1528-7483
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