There are no files associated with this item.
Full metadata record
DC Field | Value | Language |
---|---|---|
dc.citation.number | 4S | - |
dc.citation.startPage | 04CC14 | - |
dc.citation.title | JAPANESE JOURNAL OF APPLIED PHYSICS | - |
dc.citation.volume | 52 | - |
dc.contributor.author | Kim, Kyung Rok | - |
dc.contributor.author | Shin, Sunhae | - |
dc.contributor.author | Cho, Seongjae | - |
dc.contributor.author | Lee, Jung-Hee | - |
dc.contributor.author | Kang, In Man | - |
dc.date.accessioned | 2023-12-22T04:10:14Z | - |
dc.date.available | 2023-12-22T04:10:14Z | - |
dc.date.created | 2013-08-28 | - |
dc.date.issued | 2013-03 | - |
dc.description.abstract | In this work, we present a novel analytical method based on radio-frequency (RF) analysis for the accurate and reliable extraction of source and drain (S/D) series resistances in silicon nanowire (SNW) metal-oxide-semiconductor field-effect transistors (MOSFETs). The proposed method provides decomposed RF model equations for the gate-bias-independent off-state and gate-bias-dependent on-state components from both Y-and Z-parameters. The validity of our extraction method for S/D series resistances in SNW MOSFETs has been carefully tested in comparison with that of a previously reported method as well as with the physical three-dimensional (3D) device simulation. The schematically modeled Y-and Z-parameters have demonstrated excellent agreement with the numerical 3D device simulation results for various SNW MOSFET structures up to the 100 GHz frequency regime. | - |
dc.identifier.bibliographicCitation | JAPANESE JOURNAL OF APPLIED PHYSICS, v.52, no.4S, pp.04CC14 | - |
dc.identifier.doi | 10.7567/JJAP.52.04CC14 | - |
dc.identifier.issn | 0021-4922 | - |
dc.identifier.scopusid | 2-s2.0-84880789616 | - |
dc.identifier.uri | https://scholarworks.unist.ac.kr/handle/201301/4267 | - |
dc.identifier.url | http://iopscience.iop.org/article/10.7567/JJAP.52.04CC14/meta | - |
dc.identifier.wosid | 000320002400033 | - |
dc.language | 영어 | - |
dc.publisher | JAPAN SOC APPLIED PHYSICS | - |
dc.title | Novel Extraction Method for Source and Drain Series Resistances in Silicon Nanowire Metal-Oxide-Semiconductor Field-Effect-Transistors Based on Radio-Frequency Analysis | - |
dc.type | Article | - |
dc.description.isOpenAccess | FALSE | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.relation.journalResearchArea | Physics | - |
dc.description.journalRegisteredClass | scie | - |
dc.subject.keywordPlus | SUBMILLIMETER-WAVE APPLICATIONS | - |
dc.subject.keywordPlus | EFFECTIVE CHANNEL-LENGTH | - |
dc.subject.keywordPlus | SUBSTRATE RESISTANCE | - |
dc.subject.keywordPlus | RF MOSFETS | - |
dc.subject.keywordPlus | ALGAAS/GAAS HBTS | - |
dc.subject.keywordPlus | PARAMETERS | - |
dc.subject.keywordPlus | CMOS | - |
dc.subject.keywordPlus | MODEL | - |
dc.subject.keywordPlus | COMPONENTS | - |
dc.subject.keywordPlus | CONTACTS | - |
Items in Repository are protected by copyright, with all rights reserved, unless otherwise indicated.
Tel : 052-217-1404 / Email : scholarworks@unist.ac.kr
Copyright (c) 2023 by UNIST LIBRARY. All rights reserved.
ScholarWorks@UNIST was established as an OAK Project for the National Library of Korea.