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Author

Kim, Kyung Rok
Nano-Electronic Emerging Devices (NEEDs) Lab
Research Interests
  • Nano-CMOS, neuromorphic device, terahertz (THz) plasma-wave transistor (PWT)

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Novel Extraction Method for Source and Drain Series Resistances in Silicon Nanowire Metal-Oxide-Semiconductor Field-Effect-Transistors Based on Radio-Frequency Analysis

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Title
Novel Extraction Method for Source and Drain Series Resistances in Silicon Nanowire Metal-Oxide-Semiconductor Field-Effect-Transistors Based on Radio-Frequency Analysis
Author
Kim, Kyung RokShin, SunhaeCho, SeongjaeLee, Jung-HeeKang, In Man
Keywords
3D device simulation; Device simulations; Metal oxide semiconductor; Metal-oxide-semiconductor field-effect transistor; Radio frequencies; Series resistances; Silicon nanowires; Silicon nanowires (SNW)
Issue Date
201303
Publisher
JAPAN SOC APPLIED PHYSICS
Citation
JAPANESE JOURNAL OF APPLIED PHYSICS, v.52, no.4S, pp.04CC14 -
Abstract
In this work, we present a novel analytical method based on radio-frequency (RF) analysis for the accurate and reliable extraction of source and drain (S/D) series resistances in silicon nanowire (SNW) metal-oxide-semiconductor field-effect transistors (MOSFETs). The proposed method provides decomposed RF model equations for the gate-bias-independent off-state and gate-bias-dependent on-state components from both Y-and Z-parameters. The validity of our extraction method for S/D series resistances in SNW MOSFETs has been carefully tested in comparison with that of a previously reported method as well as with the physical three-dimensional (3D) device simulation. The schematically modeled Y-and Z-parameters have demonstrated excellent agreement with the numerical 3D device simulation results for various SNW MOSFET structures up to the 100 GHz frequency regime.
URI
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DOI
http://dx.doi.org/10.7567/JJAP.52.04CC14
ISSN
0021-4922
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ECE_Journal Papers

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