Novel Extraction Method for Source and Drain Series Resistances in Silicon Nanowire Metal-Oxide-Semiconductor Field-Effect-Transistors Based on Radio-Frequency Analysis
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- Novel Extraction Method for Source and Drain Series Resistances in Silicon Nanowire Metal-Oxide-Semiconductor Field-Effect-Transistors Based on Radio-Frequency Analysis
- Kim, Kyung Rok; Shin, Sunhae; Cho, Seongjae; Lee, Jung-Hee; Kang, In Man
- 3D device simulation; Device simulations; Metal oxide semiconductor; Metal-oxide-semiconductor field-effect transistor; Radio frequencies; Series resistances; Silicon nanowires; Silicon nanowires (SNW)
- Issue Date
- JAPAN SOC APPLIED PHYSICS
- JAPANESE JOURNAL OF APPLIED PHYSICS, v.52, no.4S, pp.04CC14 -
- In this work, we present a novel analytical method based on radio-frequency (RF) analysis for the accurate and reliable extraction of source and drain (S/D) series resistances in silicon nanowire (SNW) metal-oxide-semiconductor field-effect transistors (MOSFETs). The proposed method provides decomposed RF model equations for the gate-bias-independent off-state and gate-bias-dependent on-state components from both Y-and Z-parameters. The validity of our extraction method for S/D series resistances in SNW MOSFETs has been carefully tested in comparison with that of a previously reported method as well as with the physical three-dimensional (3D) device simulation. The schematically modeled Y-and Z-parameters have demonstrated excellent agreement with the numerical 3D device simulation results for various SNW MOSFET structures up to the 100 GHz frequency regime.
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