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Kim, Kyung Rok
Nano-Electronic Emerging Devices (NEEDs) Lab
Research Interests
  • Nano-CMOS, neuromorphic device, terahertz (THz) plasma-wave transistor (PWT)

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Physical Origins and Analysis of Negative-Bias Stress Instability Mechanism in Polymer-Based Thin-Film Transistors

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Title
Physical Origins and Analysis of Negative-Bias Stress Instability Mechanism in Polymer-Based Thin-Film Transistors
Author
Lee, JaewookJang, JaemanKim, HyeongjungLee, JiyoulLee, Bang-LinChoi, Sung-JinKim, Dong MyongKim, Dae HwanKim, Kyung Rok
Keywords
Negative-bias stress; instability; polymer; thin-film transistor; density-of-states; redistribution; threshold voltage; ON-current degradation; Schottky contact resistance
Issue Date
201403
Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
Citation
IEEE ELECTRON DEVICE LETTERS, v.35, no.3, pp.396 - 398
Abstract
The physical origins of the negative-bias stress (NBS) instability in polymer-based thin-film transistors have been characterized. Through the quantitative analysis by TCAD simulation for the NBS time-dependent experimental results, the threshold voltage (V-T)-shift by sub-bandgap density-of-states redistribution forms 70% and 78% for the measured total V-T-shift while V-T-shift by gate oxide charge trapping only takes 30% and 22% at NBS time of 3000 and 7000 s, respectively. In addition, the increase of source/drain Schottky contact resistance (RSD) is the main reason for NBS-induced ON-current (ION) degradation.
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DOI
http://dx.doi.org/10.1109/LED.2014.2298861
ISSN
0741-3106
Appears in Collections:
ECE_Journal Papers

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