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DC Field | Value | Language |
---|---|---|
dc.citation.endPage | 4871 | - |
dc.citation.number | 11 | - |
dc.citation.startPage | 4865 | - |
dc.citation.title | ACS APPLIED MATERIALS & INTERFACES | - |
dc.citation.volume | 5 | - |
dc.contributor.author | Yu, Hojeong | - |
dc.contributor.author | Cho, Han-Hee | - |
dc.contributor.author | Cho, Chul-Hee | - |
dc.contributor.author | Kim, Ki-Hyun | - |
dc.contributor.author | Kim, Dong Yeong | - |
dc.contributor.author | Kim, Bumjoon J. | - |
dc.contributor.author | Oh, Joon Hak | - |
dc.date.accessioned | 2023-12-22T03:46:33Z | - |
dc.date.available | 2023-12-22T03:46:33Z | - |
dc.date.created | 2013-08-28 | - |
dc.date.issued | 2013-06 | - |
dc.description.abstract | A series of o-xylene and indene fullerene derivatives with varying frontier molecular orbital energy levels were utilized for assessing the impact of the number of solubilizing groups on the electrical performance of fullerene-based organic-field-effect transistors (OFETs). The charge-carrier polarity was found to be strongly dependent upon the energy levels of fullerene derivatives. The o-xylene C60 monoadduct (OXCMA) and indene C60 monoadduct (ICMA) exhibited unipolar n-channel behaviors with high electron mobilities, whereas the bis- and trisadducts of indene and o-xylene C60 derivatives showed ambipolar charge transport. The OXCMA OFETs fabricated by solution shearing and molecular n-type doping showed an electron mobility of up to 2.28 cm2 V-1 s-1, which is one of the highest electron mobilities obtained from solution-processed fullerene thin-film devices. Our findings systematically demonstrate the relationship between the energy level and charge-carrier polarity and provide insight into molecular design and processing strategies toward high-performance fullerene-based OFETs. | - |
dc.identifier.bibliographicCitation | ACS APPLIED MATERIALS & INTERFACES, v.5, no.11, pp.4865 - 4871 | - |
dc.identifier.doi | 10.1021/am400618r | - |
dc.identifier.issn | 1944-8244 | - |
dc.identifier.scopusid | 2-s2.0-84879101347 | - |
dc.identifier.uri | https://scholarworks.unist.ac.kr/handle/201301/4041 | - |
dc.identifier.url | http://www.scopus.com/inward/record.url?partnerID=HzOxMe3b&scp=84879101347 | - |
dc.identifier.wosid | 000320484000052 | - |
dc.language | 영어 | - |
dc.publisher | AMER CHEMICAL SOC | - |
dc.title | Polarity and Air-Stability Transitions in Field-Effect Transistors Based on Fullerenes with Different Solubilizing Groups | - |
dc.type | Article | - |
dc.description.isOpenAccess | FALSE | - |
dc.relation.journalWebOfScienceCategory | Nanoscience & Nanotechnology; Materials Science, Multidisciplinary | - |
dc.relation.journalResearchArea | Science & Technology - Other Topics; Materials Science | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.subject.keywordAuthor | fullerene | - |
dc.subject.keywordAuthor | organic-field-effect transistor | - |
dc.subject.keywordAuthor | solubilizing groups | - |
dc.subject.keywordAuthor | n-type doping | - |
dc.subject.keywordAuthor | molecular design | - |
dc.subject.keywordPlus | THIN-FILM TRANSISTORS | - |
dc.subject.keywordPlus | POLYMER SOLAR-CELLS | - |
dc.subject.keywordPlus | SUBSTITUTED C-60 DERIVATIVES | - |
dc.subject.keywordPlus | OPEN-CIRCUIT VOLTAGE | - |
dc.subject.keywordPlus | N-TYPE DOPANT | - |
dc.subject.keywordPlus | ORGANIC SEMICONDUCTORS | - |
dc.subject.keywordPlus | CHARGE-TRANSPORT | - |
dc.subject.keywordPlus | MATERIALS DESIGN | - |
dc.subject.keywordPlus | PERFORMANCE | - |
dc.subject.keywordPlus | MOBILITY | - |
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