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Author

Lee, Zonghoon
Atomic-Scale Electron Microscopy (ASEM) Lab
Research Interests
  • Advanced Transmission Electron Microscopy (TEM/STEM), in Situ TEM, graphene, 2D materials, low-dimensional crystals, nanostructured materials

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Fast Synthesis of High-Performance Graphene Films by Hydrogen-Free Rapid Thermal Chemical Vapor Deposition

Cited 3 times inthomson ciCited 2 times inthomson ci
Title
Fast Synthesis of High-Performance Graphene Films by Hydrogen-Free Rapid Thermal Chemical Vapor Deposition
Author
Ryu, JaechulKim, YoungsooWon, DongkwanKim, NayoungPark, Jin SungLee, Eun-KyuCho, DonyubCho, Sung-PyoKim, Sang JinRyu, Gyeong HeeShin, Hae-A-SeulLee, ZonghoonHong, Byung HeeCho, Seungmin
Keywords
graphene; transparent; flexible; foldable; touch screen; chemical vapor deposition
Issue Date
201401
Publisher
AMER CHEMICAL SOC
Citation
ACS NANO, v.8, no.1, pp.950 - 956
Abstract
The practical use of graphene in consumer electronics has not been demonstrated since the size, uniformity, and reliability problems are yet to be solved to satisfy industrial standards. Here we report mass-produced graphene films synthesized by hydrogen-free rapid thermal chemical vapor deposition (RT-CVD), roll-to-roll etching, and transfer methods, which enabled faster and larger production of homogeneous graphene films over 400 300 mm2 area with a sheet resistance of 249 ( 17 Ω/sq without additional doping. The properties of RT-CVD graphene have been carefully characterized by high-resolution transmission electron microscopy, Raman spectroscopy, chemical grain boundary analysis, and various electrical device measurements, showing excellent uniformity and stability. In particular, we found no significant correlation between graphene domain sizes and electrical conductivity, unlike previous theoretical expectations for nanoscale graphene domains. Finally, the actual application of the RT-CVD films to capacitive multitouch devices installed in the most sophisticated mobile phone was demonstrated.
URI
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DOI
http://dx.doi.org/10.1021/nn405754d
ISSN
1936-0851
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