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Kim, Kyung Rok
Nano-Electronic Emerging Devices (NEEDs) Lab
Research Interests
  • Nano-CMOS, neuromorphic device, terahertz (THz) plasma-wave transistor (PWT)

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InGaAs/InP heterojunction-channel tunneling field-effect transistor for ultra-low operating and standby power application below supply voltage of 0.5 v

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Title
InGaAs/InP heterojunction-channel tunneling field-effect transistor for ultra-low operating and standby power application below supply voltage of 0.5 v
Author
Kim, Kyung RokYoon, Young JunCho, SeongjaeSeo, Jae HwaLee, Jung-HeeBae, Jin-HyukCho, Eou-SikKang, In Man
Keywords
Current ratio; Heterojunction; High speed; Low operating power; Subthreshold swing; Tunneling field-effect transistor
Issue Date
201311
Publisher
ELSEVIER SCIENCE BV
Citation
CURRENT APPLIED PHYSICS, v.13, no.9, pp.2051 - 2054
Abstract
An In0.53Ga0.47As/InP heterojunction-channel tunneling field-effect transistor (TFET) with enhanced subthreshold swing (S) and on/off current ratio (Ion/Ioff) is studied. The proposed TFET achieves remarkable characteristics including S of 16.5 mV/dec, on-state current (Ion) of 421 μA/μm, Ion/I off of 1.2 × 1012 by design optimization in doping type of In0.53Ga0.47As channel at low gate (V GS) and drain voltages (VDS) of 0.5 V. Comparable performances are maintained at VDS below 0.5 V. Moreover, an extremely fast switching below 100 fs is accomplished by the device. It is confirmed that the proposed TFET has strong potentials for the ultra-low operating power and high-speed electron device.
URI
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DOI
http://dx.doi.org/10.1016/j.cap.2013.08.013
ISSN
1567-1739
Appears in Collections:
ECE_Journal Papers

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