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Kim, Kyung Rok
Nano-Electronic Emerging Devices Lab.
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Enhanced photoresponse of plasmonic terahertz wave detector based on silicon field effect transistors with asymmetric source and drain structures

Author(s)
Ryu, Min WooKim, Sung-HoKim, Kyung Rok
Issued Date
2013-12
DOI
10.5573/JSTS.2013.13.6.576
URI
https://scholarworks.unist.ac.kr/handle/201301/3873
Fulltext
http://www.scopus.com/inward/record.url?partnerID=HzOxMe3b&scp=84890863132
Citation
JOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE, v.13, no.6, pp.576 - 580
Abstract
We investigate the enhanced effects of asymmetry ratio variations of the source and drain area in silicon (Si) field-effect transistor (FET). Photoresponse according to the variation of asymmetry difference between the width of source and drain are obtained by using the plasmonic terahertz (THz) wave detector simulation based on technology computer-aided design (TCAD) with the quasi-plasma 2DEG model. The simulation results demonstrate the potential of Si FETs with asymmetric source and drain structures as the promising plasmonic THz detectors.
Publisher
IEEK PUBLICATION CENTER
ISSN
1598-1657

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