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Author

Kim, Kyung Rok
Nano-Electronic Emerging Devices (NEEDs) Lab
Research Interests
  • Nano-CMOS, neuromorphic device, terahertz (THz) plasma-wave transistor (PWT)

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Enhanced photoresponse of plasmonic terahertz wave detector based on silicon field effect transistors with asymmetric source and drain structures

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Title
Enhanced photoresponse of plasmonic terahertz wave detector based on silicon field effect transistors with asymmetric source and drain structures
Author
Ryu, Min WooKim, Sung-HoKim, Kyung Rok
Keywords
Asymmetry; Photoresponse; Quasi-plasma 2DEG; TCAD simulation; Terahertz wave detector
Issue Date
201312
Publisher
IEEK PUBLICATION CENTER
Citation
JOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE, v.13, no.6, pp.576 - 580
Abstract
We investigate the enhanced effects of asymmetry ratio variations of the source and drain area in silicon (Si) field-effect transistor (FET). Photoresponse according to the variation of asymmetry difference between the width of source and drain are obtained by using the plasmonic terahertz (THz) wave detector simulation based on technology computer-aided design (TCAD) with the quasi-plasma 2DEG model. The simulation results demonstrate the potential of Si FETs with asymmetric source and drain structures as the promising plasmonic THz detectors.
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DOI
http://dx.doi.org/10.5573/JSTS.2013.13.6.576
ISSN
1598-1657
Appears in Collections:
ECE_Journal Papers

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