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DC Field | Value | Language |
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dc.citation.endPage | 6 | - |
dc.citation.number | 28 | - |
dc.citation.startPage | 1 | - |
dc.citation.title | JOURNAL OF PHYSICS D-APPLIED PHYSICS | - |
dc.citation.volume | 44 | - |
dc.contributor.author | Kwon, Soon-Yong | - |
dc.contributor.author | Sun, Q. | - |
dc.contributor.author | Kwak, J. | - |
dc.contributor.author | Seo, H-C | - |
dc.contributor.author | Han, J. | - |
dc.date.accessioned | 2023-12-22T06:08:20Z | - |
dc.date.available | 2023-12-22T06:08:20Z | - |
dc.date.created | 2013-06-18 | - |
dc.date.issued | 2011-07 | - |
dc.description.abstract | Growth of cubic InN (c-InN) under N-rich condition was achieved by metalorganic chemical vapour deposition on GaP(1 0 0) substrates with a cubic GaN (c-GaN) buffer layer. Insertion of the c-GaN buffer layer suppressed In droplet formation in c-InN. X-ray diffraction and transmission electron microscopy investigations showed that the InN layers have zincblende structure with only a small fraction of oxide phase inclusions and no significant hexagonal InN is present. By systemically varying growth conditions, it was found that the c-InN growth is dominated mainly by In adatoms' surface diffusion and InN surface decomposition and three distinct regimes of c-InN growth are observed. The growth of c-InN on c-GaN/GaP(1 0 0) templates eventually followed a three-dimensional growth mode in the thermally activated growth regime and density and size distribution of c-InN dots significantly changed with substrate temperature and growth rate. These results provide a stronger understanding of the growth mechanism to design and engineer InN-based nanostructures with desired shapes for potential technological applications. | - |
dc.identifier.bibliographicCitation | JOURNAL OF PHYSICS D-APPLIED PHYSICS, v.44, no.28, pp.1 - 6 | - |
dc.identifier.doi | 10.1088/0022-3727/44/28/285403 | - |
dc.identifier.issn | 0022-3727 | - |
dc.identifier.scopusid | 2-s2.0-79960277589 | - |
dc.identifier.uri | https://scholarworks.unist.ac.kr/handle/201301/3827 | - |
dc.identifier.url | http://iopscience.iop.org/article/10.1088/0022-3727/44/28/285403/meta | - |
dc.identifier.wosid | 000292090400014 | - |
dc.language | 영어 | - |
dc.publisher | IOP PUBLISHING LTD | - |
dc.title | Growth of cubic InN on GaP(100) with GaN buffer by metalorganic chemical vapour deposition | - |
dc.type | Article | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.relation.journalResearchArea | Physics | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
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