PHYSICS OF SEMICONDUCTORS: 27th International Conference on the Physics of Semiconductors, ICPS-27, v.772, pp.1559 - 1560
Abstract
Reflectivity of a quarter wave mirror (QWM) can be controlled by choosing the outermost layer of the QWM appropriately. For a GaAs/Al 0.75Ga0.25As QWM, depositing a TiO2 layer as the incoming outermost layer decreases the reflectivity to the same degree as removing 18.5 layers. Therefore, an efficient method to fabricate resonant cavity enhanced photodiodes for bi-directional optical interconnects is proposed. This method needs no etching process for quantum efficiency tuning, while giving a quantum efficiency of approximately 90% using currently available deposition technique.
Publisher
PHYSICS OF SEMICONDUCTORS: 27th International Conference on the Physics of Semiconductors, ICPS-27