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Chung, Il-Sug
Nano-Optoelectronics Lab.
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Improvement of fabrication method of resonant cavity enhanced photodiodes for bi-directional optical interconnects

Author(s)
Chung, Il-SugLee, Yong TakKim, Jae-EunPark, Hae Yong
Issued Date
2004-07-26
DOI
10.1063/1.1994712
URI
https://scholarworks.unist.ac.kr/handle/201301/37440
Fulltext
http://aip.scitation.org/doi/abs/10.1063/1.1994712
Citation
PHYSICS OF SEMICONDUCTORS: 27th International Conference on the Physics of Semiconductors, ICPS-27, v.772, pp.1559 - 1560
Abstract
Reflectivity of a quarter wave mirror (QWM) can be controlled by choosing the outermost layer of the QWM appropriately. For a GaAs/Al 0.75Ga0.25As QWM, depositing a TiO2 layer as the incoming outermost layer decreases the reflectivity to the same degree as removing 18.5 layers. Therefore, an efficient method to fabricate resonant cavity enhanced photodiodes for bi-directional optical interconnects is proposed. This method needs no etching process for quantum efficiency tuning, while giving a quantum efficiency of approximately 90% using currently available deposition technique.
Publisher
PHYSICS OF SEMICONDUCTORS: 27th International Conference on the Physics of Semiconductors, ICPS-27
ISBN
978-073540257-7
ISSN
0094-243X

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