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Baik, Jeong Min
Nano Energy and Environmental Materials Lab
Research Interests
  • Nanogenerators, antimicrobial material, catalysis, smart sensors

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Design of an Interfacial Layer to Block Chemical Reaction for Epitaxial ZnO Growth on a Si Substrate

Cited 6 times inthomson ciCited 4 times inthomson ci
Title
Design of an Interfacial Layer to Block Chemical Reaction for Epitaxial ZnO Growth on a Si Substrate
Author
Yu, Hak KiBaik, Jeong MinLee, Jong-Lam
Keywords
Epitaxial relations; High crystallinity; Interfacial layer; Interfacial reactions; MgO buffer layer; Optical performance; Si substrates; Si(111) substrate; Thermodynamically stable; ZnO; ZnO films
Issue Date
201106
Publisher
AMER CHEMICAL SOC
Citation
CRYSTAL GROWTH & DESIGN, v.11, no.6, pp.2438 - 2443
Abstract
Epitaxial growth of ZnO film on Si(111) substrates using an MgO interfacial layer has been investigated. The MgO layer acts as a thermodynamically stable buffer layer to suppress interfacial reaction between ZnO and Si, producing a clear interface. A domain-matched structure with mixed 4/3 and 5/4 domains was formed at the interface of Si and MgO to achieve the lowest domain mismatch. Moreover, the epitaxial ZnO film was grown on a MgO buffer layer with a domain matched structure of 11/12 domains, resulting in an (0001)[1 (2) over bar 10](ZnO)parallel to(111)[1 (1) over bar0](MgO)parallel to(111)[1 (1) over bar0](Si) epitaxial relation, The high crystallinity of ZnO film grown on MgO/Si shows good optical performance with strong photoluminescence and improved Hall mobility.
URI
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DOI
http://dx.doi.org/10.1021/cg200203s
ISSN
1528-7483
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