BROWSE

Related Researcher

Author

Lee, Jeong Chul
Interdisciplinary School of Green Energy
Research Interests

ITEM VIEW & DOWNLOAD

Analysis on the interfacial properties of transparent conducting oxide and hydrogenated p-type amorphous silicon carbide layers in p-i-n amorphous silicon thin film solar cell structure

Cited 3 times inthomson ciCited 3 times inthomson ci
Title
Analysis on the interfacial properties of transparent conducting oxide and hydrogenated p-type amorphous silicon carbide layers in p-i-n amorphous silicon thin film solar cell structure
Author
Lee, Ji EunPark, Joo HyungCho, Jun-SikChung, Jin-WonSong, JinsooKim, DonghwanLee, Jeong Chul
Keywords
Amorphous silicon; Thin films; Solar cell; Aluminum-doped zinc oxide; Fluorine-doped tin oxide; Buffer layer; Fill factor; Barrier height
Issue Date
201207
Publisher
ELSEVIER SCIENCE SA
Citation
THIN SOLID FILMS, v.520, no.18, pp.6007 - 6011
Abstract
Quantitative estimation of the specific contact resistivity and energy barrier at the interface between transparent conducting oxide (TCO) and hydrogenated p-type amorphous silicon carbide (a-Si1-xCx:H(p)) was carried out by inserting an interfacial buffer layer of hydrogenated p-type microcrystalline silicon (mu c-Si:H(p)) or hydrogenated p-type amorphous silicon (a-Si:H(p)). In addition, superstrate configuration p-i-n hydrogenated amorphous silicon (a-Si:H) solar cells were fabricated by plasma enhanced chemical vapor deposition to investigate the effect of the inserted buffer layer on the solar cell device. Ultraviolet photoelectron spectroscopy was employed to measure the work functions of the TCO and a-Si1-xCx: H(p) layers and to allow direct calculations of the energy barriers at the interfaces. Especially interface structures were compared with/without a buffer which is either highly doped mu c-Si: H(p) layer or low doped a-Si:H(p) layer, to improve the contact properties of aluminum-doped zinc oxide and a-Si1-xCx:H(p). Out of the two buffers, the superior contact properties of mu c-Si: H(p) buffer could be expected due to its higher conductivity and slightly lower specific contact resistivity. However, the overall solar cell conversion efficiencies were almost the same for both of the buffered structures and the resultant similar efficiencies were attributed to the difference between the fill factors of the solar cells. The effects of the energy barrier heights of the two buffered structures and their influence on solar cell device performances were intensively investigated and discussed with comparisons.
URI
Go to Link
DOI
http://dx.doi.org/10.1016/j.tsf.2012.04.081
ISSN
0040-6090
Appears in Collections:
ECHE_Journal Papers

find_unist can give you direct access to the published full text of this article. (UNISTARs only)

Show full item record

qr_code

  • mendeley

    citeulike

Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.

MENU