Magnetotransport of Epitaxial Graphene on Hexagonal SiC Surface Grown with Metal Plate Capping

Abstract

High quality epitaxial graphene (EG) was grown on a Si-face hexagonal SiC substrate by capping the surface with a metal plate (Molybdenum, Tungsten) during UHV annealing. The growth temperature was ∼ 950 degree C, significantly lower than the conventional UHV annealing. The crystallinity of EG film was examined with Raman spectrum measurements. Almost no D-peak and a large narrow 2D-peak ensure that a thin (mono- or bi-layer) EG film was grown with a negligible number of defects. The electrical properties of EG film were also characterized by performing magnetotransport measurements with Hall-bar structures. The carrier type was found to be n-type, the sheet carrier density be (3.6-9.2)x10\textasciicircum 12 /cm\textasciicircum 2, and the Hall mobility be \textasciitilde 2100 cm\textasciicircum 2/Vs. Due to the relatively high carrier density, the Quantum Hall Effect was observed only for high filling factors up to 14 T. However, clear Shubnikov-de-Hass oscillations were observed, indicating that the random carrier scattering due to impurities or defects is minimal in the EG film grown with metal plate capping.