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DC Field | Value | Language |
---|---|---|
dc.citation.conferencePlace | US | - |
dc.citation.conferencePlace | New Orleans | - |
dc.citation.title | APS March Meeting 2017 | - |
dc.contributor.author | Park, Kibog | - |
dc.contributor.author | Yoon, Hoon Hahn | - |
dc.contributor.author | Jung, Sungchul | - |
dc.contributor.author | Choi, Gahyun | - |
dc.contributor.author | Kim, Junhyung | - |
dc.contributor.author | Jeon, Youngeun | - |
dc.contributor.author | Kim, Yong Soo | - |
dc.contributor.author | Jeong, Hu Young | - |
dc.contributor.author | Kim, Kwanpyo | - |
dc.contributor.author | Kwon, Soon-Yong | - |
dc.date.accessioned | 2023-12-19T19:36:10Z | - |
dc.date.available | 2023-12-19T19:36:10Z | - |
dc.date.created | 2017-05-04 | - |
dc.date.issued | 2017-03-14 | - |
dc.description.abstract | We report the systematic experimental studies demonstrating that a graphene layer inserted at Metal/n-Si(001) interface can protect the Schottky junction efficiently from unwanted changes in electrical properties. High-resolution transmission electron microscopy (HRTEM) images support the conjecture of the inserted graphene layer preventing the atomic inter-diffusion at interface. Especially, the reverse-bias leakage current of Metal/Graphene/n-Si(001) junction is found to be noticeably smaller than that of Metal/n-Si(001) junction, strongly supporting the role of graphene insertion layer as an efficient diffusion barrier. The internal photoemission (IPE) measurements show unambiguously that the Schottky barrier of Metal/Graphene/n-Si(001) junction is almost independent of metal work-function, implying very strong Fermi-level pinning at interface. The atomically-impermeable and electronically-transparent aspects of the graphene insertion layer can provide a reliable experimental method to form an intact Schottky contact for all semiconductors in general. | - |
dc.identifier.bibliographicCitation | APS March Meeting 2017 | - |
dc.identifier.uri | https://scholarworks.unist.ac.kr/handle/201301/36739 | - |
dc.identifier.url | http://meetings.aps.org/Meeting/MAR17/Session/E33.5 | - |
dc.language | 영어 | - |
dc.publisher | APS March Meeting 2017 | - |
dc.title | Strong Fermi-Level Pinning at Intact Metal/Si Interface Formed with Graphene Diffusion Barrier | - |
dc.type | Conference Paper | - |
dc.date.conferenceDate | 2017-03-13 | - |
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