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신형준

Shin, Hyung-Joon
Nanoscale Materials Science Lab.
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dc.citation.endPage 6145 -
dc.citation.number 16 -
dc.citation.startPage 6142 -
dc.citation.title JOURNAL OF THE AMERICAN CHEMICAL SOCIETY -
dc.citation.volume 133 -
dc.contributor.author Jung, Jaehoon -
dc.contributor.author Shin, Hyung-Joon -
dc.contributor.author Kim, Yousoo -
dc.contributor.author Kawai, Maki -
dc.date.accessioned 2023-12-22T06:13:10Z -
dc.date.available 2023-12-22T06:13:10Z -
dc.date.created 2013-07-24 -
dc.date.issued 2011-04 -
dc.description.abstract Periodic density functional theory calculations revealed strong enhancement of chemical reactivity by defects located at the oxide-metal interface for water dissociation on ultrathin MgO films deposited on Ag(100) substrate. Accumulation of charge density at the oxide-metal interface due to irregular interface defects influences the chemical reactivity of MgO films by changing the charge distribution at the oxide surface. Our results reveal the importance of buried interface defects in controlling chemical reactions on an ultrathin oxide film supported by a metal substrate. -
dc.identifier.bibliographicCitation JOURNAL OF THE AMERICAN CHEMICAL SOCIETY, v.133, no.16, pp.6142 - 6145 -
dc.identifier.doi 10.1021/ja200854g -
dc.identifier.issn 0002-7863 -
dc.identifier.scopusid 2-s2.0-79955030526 -
dc.identifier.uri https://scholarworks.unist.ac.kr/handle/201301/3615 -
dc.identifier.url http://www.scopus.com/inward/record.url?partnerID=HzOxMe3b&scp=79955030526 -
dc.identifier.wosid 000292715500012 -
dc.language 영어 -
dc.publisher AMER CHEMICAL SOC -
dc.title Activation of Ultrathin Oxide Films for Chemical Reaction by Interface Defects -
dc.type Article -
dc.description.journalRegisteredClass scie -
dc.description.journalRegisteredClass scopus -

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