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- Kim, Kyung Rok
- Nano-Electronic Emerging Devices Lab.
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| DC Field | Value | Language |
|---|---|---|
| dc.citation.conferencePlace | US | - |
| dc.citation.conferencePlace | Honolulu, HI | - |
| dc.citation.title | 2012 17th IEEE Silicon Nanoelectronics Workshop, SNW 2012 | - |
| dc.contributor.author | Kim, Kyung Rok | - |
| dc.contributor.author | Shin, Sunhae | - |
| dc.contributor.author | Ryu, Min Woo | - |
| dc.date.accessioned | 2023-12-20T02:06:56Z | - |
| dc.date.available | 2023-12-20T02:06:56Z | - |
| dc.date.created | 2013-07-17 | - |
| dc.date.issued | 2012-06-10 | - |
| dc.description.abstract | Negative differential resistance (NDR) devices are proposed with ultra-high peak-to-valley current ratio (PVCR) over 10 4 based on silicon nanowire structure. | - |
| dc.identifier.bibliographicCitation | 2012 17th IEEE Silicon Nanoelectronics Workshop, SNW 2012 | - |
| dc.identifier.doi | 10.1109/SNW.2012.6243340 | - |
| dc.identifier.scopusid | 2-s2.0-84867211349 | - |
| dc.identifier.uri | https://scholarworks.unist.ac.kr/handle/201301/35701 | - |
| dc.identifier.url | https://ieeexplore.ieee.org/document/6243340 | - |
| dc.language | 영어 | - |
| dc.publisher | 2012 17th IEEE Silicon Nanoelectronics Workshop, SNW 2012 | - |
| dc.title | Negative Differential Resistance Devices with Ultra-High-Peak-to-Valley Current Ratio Based on Silicon Nanowire Structure | - |
| dc.type | Conference Paper | - |
| dc.date.conferenceDate | 2012-06-10 | - |
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