dc.citation.conferencePlace |
US |
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dc.citation.conferencePlace |
Honolulu, HI |
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dc.citation.title |
2012 17th IEEE Silicon Nanoelectronics Workshop, SNW 2012 |
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dc.contributor.author |
Kim, Kyung Rok |
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dc.contributor.author |
Kim, Sung-Ho |
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dc.contributor.author |
Ryu, Min Woo |
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dc.date.accessioned |
2023-12-20T02:06:56Z |
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dc.date.available |
2023-12-20T02:06:56Z |
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dc.date.created |
2013-07-17 |
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dc.date.issued |
2012-06-10 |
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dc.description.abstract |
In this study, we investigate the effects of amorphous silicon (a-Si) mass density variations on the electrical series and contact resistance of nanoscale structures for thin-film transistors (TFTs). Impurity distributions according to the variation of a-Si mass density (ρ a-Si) are obtained from Monte-Carlo (MC) method and the resistance extraction are performed by using device simulation based on transfer length method (TLM) with a-Si mobility and Schottky contact model. Under the small variations of ±5% from standard ρ a-Si, electrical resistances are significantly changed with 30% variations from its typical characteristics in nanoscale TFTs. |
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dc.identifier.bibliographicCitation |
2012 17th IEEE Silicon Nanoelectronics Workshop, SNW 2012 |
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dc.identifier.doi |
10.1109/SNW.2012.6243300 |
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dc.identifier.scopusid |
2-s2.0-84867205149 |
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dc.identifier.uri |
https://scholarworks.unist.ac.kr/handle/201301/35700 |
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dc.identifier.url |
https://ieeexplore.ieee.org/document/6243300 |
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dc.language |
영어 |
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dc.publisher |
2012 17th IEEE Silicon Nanoelectronics Workshop, SNW 2012 |
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dc.title |
Effects of Amorphous Silicon Atomic Density Variation on Series and Contact Resistances in Nanoscale Thin-Film Structures |
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dc.type |
Conference Paper |
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dc.date.conferenceDate |
2012-06-10 |
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