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Yang, Changduk
Advanced Tech-Optoelectronic Materials Synthesis Lab (ATOMS)
Research Interests
  • Optoelectronic materials synthesis/organic electronics, functionalization of carbonaceous solids, advanced materials chemistry, macromolecular chemistry

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Solution-Processable Ambipolar Diketopyrrolopyrrole-Selenophene Polymer with Unprecedentedly High Hole and Electron Mobilities

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Title
Solution-Processable Ambipolar Diketopyrrolopyrrole-Selenophene Polymer with Unprecedentedly High Hole and Electron Mobilities
Author
Lee, JunghoonHan, A-ReumKim, JonggiKim, YihoOh, Joon HakYang, Changduk
Keywords
Ambipolar; Conjugated backbones; Device fabrications; Diketopyrrolopyrroles; Molecular engineering; P-type; Polymer backbones; Polymer components; Process architecture; Research progress; Selenophene; Side-chain dynamics; Side-chains; Single layer; Solution-processing; Synergistic combinations; Thin-film transistor (TFTs); Transistor operation
Issue Date
201212
Publisher
AMER CHEMICAL SOC
Citation
JOURNAL OF THE AMERICAN CHEMICAL SOCIETY, v.134, no.51, pp.20713 - 20721
Abstract
There is a fast-growing demand for polymer-based ambipolar thin-film transistors (TFTs), in which both n-type and p-type transistor operations are realized in a single layer, while maintaining simplicity in processing. Research progress toward this end is essentially fueled by molecular engineering of the conjugated backbones of the polymers and the development of process architectures for device fabrication, which has recently led to hole and electron mobilities of more than 1.0 cm(2) V-1 s(-1). However, ambipolar polymers with even higher performance are still required. By taking into account both the conjugated backbone and side chains of the polymer component, we have developed a dithienyi-diketopyrrolo-pyrrole (TDPP) and selenophene containing polymer with hybrid silmane-solubilizing groups (PTDPPSe-Si). A synergistic combination of rational polymer backbone design, side-chain dynamics, and solution processing affords an enormous boost in ambipolar TFT performance, resulting in unprecedentedly high hole and electron mobilities of 3.97 and 2.20 cm(2) V-1 s(-1), respectively.
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DOI
http://dx.doi.org/10.1021/ja308927g
ISSN
0002-7863
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