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- Kim, Kyung Rok
- Nano-Electronic Emerging Devices Lab.
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| DC Field | Value | Language |
|---|---|---|
| dc.citation.conferencePlace | JA | - |
| dc.citation.conferencePlace | Rega Royal Hotel Kyoto | - |
| dc.citation.title | Silicon Nanoelectronics Workshop, SNW 2015 | - |
| dc.contributor.author | Park, Jong Yul | - |
| dc.contributor.author | Kim, Sung-Ho | - |
| dc.contributor.author | Kim, Kyung Rok | - |
| dc.date.accessioned | 2023-12-19T22:11:07Z | - |
| dc.date.available | 2023-12-19T22:11:07Z | - |
| dc.date.created | 2015-09-02 | - |
| dc.date.issued | 2015-06-14 | - |
| dc.description.abstract | In this work, we propose a novel Si-compatible resonant plasma-wave transistor (R-PWT) with 2D silicene channel for a high-performance terahertz (THz) electromagnetic (EM) wave emitter. High resonance quality i.e. narrow emission spectra can be obtained by high mobility of 2D silicene channel (μ= 2×105 cm2V−1·s−1) since nanoscale channel length L can be much smaller than the maximum channel length Lmax= 1395 nm even under relatively low gate voltage. | - |
| dc.identifier.bibliographicCitation | Silicon Nanoelectronics Workshop, SNW 2015 | - |
| dc.identifier.scopusid | 2-s2.0-84962264055 | - |
| dc.identifier.uri | https://scholarworks.unist.ac.kr/handle/201301/35523 | - |
| dc.identifier.url | http://ieeexplore.ieee.org/xpl/articleDetails.jsp?reload=true&arnumber=7275318 | - |
| dc.language | 영어 | - |
| dc.publisher | Silicon Nanoelectronics Workshop, SNW 2015 | - |
| dc.title | Silicon-Compatible Resonant Plasma-Wave Transistor with 2D Silicene Channel for High-Performance Terahertz Electromagnetic Wave Emitters | - |
| dc.type | Conference Paper | - |
| dc.date.conferenceDate | 2015-06-14 | - |
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