dc.citation.conferencePlace |
IT |
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dc.citation.conferencePlace |
Rome(Italy) |
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dc.citation.endPage |
908 |
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dc.citation.startPage |
905 |
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dc.citation.title |
2015 15th International Conference On Nanotechnology |
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dc.contributor.author |
Kim, Sung-Ho |
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dc.contributor.author |
Park, Jong Yul |
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dc.contributor.author |
Kim, Kyung Rok |
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dc.date.accessioned |
2023-12-19T22:08:14Z |
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dc.date.available |
2023-12-19T22:08:14Z |
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dc.date.created |
2015-11-26 |
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dc.date.issued |
2015-07-29 |
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dc.description.abstract |
We report a novel FinFET-based high electron mobility transistor (FinHEMT) with a strained-silicon (s-Si) channel proposed by a simple Si-compatible fabrication process. Through TCAD device simulation, proposed FinHEMT can be used as high-performance low-power transistor with high oncurrent (> 1 mA/mm) and low off-current (~10 pA/mm). Channel electron mobility in s-Si FinHEMT is highly enhanced over 1000 cm2/Vs, which is 4 times higher than that of FinFET. |
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dc.identifier.bibliographicCitation |
2015 15th International Conference On Nanotechnology , pp.905 - 908 |
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dc.identifier.doi |
10.1109/NANO.2015.7388761 |
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dc.identifier.scopusid |
2-s2.0-84964354759 |
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dc.identifier.uri |
https://scholarworks.unist.ac.kr/handle/201301/35502 |
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dc.identifier.url |
https://ieeexplore.ieee.org/document/7388761 |
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dc.language |
영어 |
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dc.publisher |
IEEE |
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dc.title |
FinHEMT: FinFET-based High Electron Mobility Transistor with Strained Silicon Channel |
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dc.type |
Conference Paper |
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dc.date.conferenceDate |
2015-07-27 |
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