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신현석

Shin, Hyeon Suk
Lab for Carbon and 2D Materials
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Facile Method for rGO Field Effect Transistor: Selective Adsorption of rGO on SAM-Treated Gold Electrode by Electrostatic Attraction

Author(s)
Yang, JieunKim, Jung-WooShin, Hyeon Suk
Issued Date
2012-05
DOI
10.1002/adma.201104094
URI
https://scholarworks.unist.ac.kr/handle/201301/3516
Fulltext
http://www.scopus.com/inward/record.url?partnerID=HzOxMe3b&scp=84860337606
Citation
ADVANCED MATERIALS, v.24, no.17, pp.2299 - 2303
Abstract
A facile method for the fabrication of negatively and positively charged rGO field effect transistors (FETs) is proposed, which utilizes electrostatic attraction between electrodes and rGO sheets. Negatively and positively charged rGO sheets are functionalized with carboxylic acid and amine groups, respectively. The FET of amine-functionalized rGO exhibits an n-doping effect. The FET devices fabricated by this method show high mobility of carriers.
Publisher
WILEY-V C H VERLAG GMBH
ISSN
0935-9648
Keyword (Author)
reduced graphene oxidefield effect transistorsself-assembled monolayerdoping
Keyword
SELF-ASSEMBLED MONOLAYERSREDUCED GRAPHENE OXIDEFILMSPHASE

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