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Author

Shin, Hyeon Suk
Lab for Nanomaterials and Nanoanalysis(LNN)
Research Interests
  • Two-dimensional materials, graphene, transition metal dichalcogenides, h-BN, heterostructure

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Facile Method for rGO Field Effect Transistor: Selective Adsorption of rGO on SAM-Treated Gold Electrode by Electrostatic Attraction

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Title
Facile Method for rGO Field Effect Transistor: Selective Adsorption of rGO on SAM-Treated Gold Electrode by Electrostatic Attraction
Author
Yang, JieunKim, Jung-WooShin, Hyeon Suk
Keywords
Amine groups; Electrostatic attractions; Facile method; Functionalized; Gold electrodes; High mobility; N-Doping; Positively charged; Reduced graphene oxides; Selective adsorption
Issue Date
201205
Publisher
WILEY-V C H VERLAG GMBH
Citation
ADVANCED MATERIALS, v.24, no.17, pp.2299 - 2303
Abstract
A facile method for the fabrication of negatively and positively charged rGO field effect transistors (FETs) is proposed, which utilizes electrostatic attraction between electrodes and rGO sheets. Negatively and positively charged rGO sheets are functionalized with carboxylic acid and amine groups, respectively. The FET of amine-functionalized rGO exhibits an n-doping effect. The FET devices fabricated by this method show high mobility of carriers.
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DOI
http://dx.doi.org/10.1002/adma.201104094
ISSN
0935-9648
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