Study on the fabrication of silicon nanoparticles in an amorphous silicon light absorbing layer for solar cell applications

Abstract

Hydrogenated amorphous-silicon (a-Si:H) thin-film solar cells have advantages of relatively simple technology, less material consumption, higher absorption ratio compared to crystalline silicon, and low cost due to the use of cheaper substrates rather than silicon wafers. However, together with those advantages, amorphous-silicon thin-film solar cells face several issues such as a relatively lower efficiency, a relatively wider bandgap, and the Staebler-Wronski effect (SWE) compared to other competing materials (i.e., crystalline silicon, CdTe, Cu(In (x) Ga(1-x))Se-2 (CIGS), etc.). As a remedy for those drawbacks and a way to enhance the cell conversion efficiency at the same time, the employment of crystalline silicon nanoparticles (Si-NPs) in the a-Si matrix is proposed to organize the quantum-dot (QD) structure as the light-absorbing layer. This structure of the light absorbing layer consists of single-crystal Si-NPs in an a-Si:H thin-film matrix. The single-crystal Si-NPs are synthesized by using SiH4 gas decomposition with CO2 laser pyrolysis, and the sizes of Si-NPs are calibrated to control their bandgaps. The synthesized size-controlled Si-NPs are directly transferred to another chamber to form a QD structure by using co-deposition of the Si-NPs and the a-Si:H matrix. Transmission electron microscopy (TEM) analyses are employed to verify the sizes and the crystalline properties of the Si-NPs alone and of the Si-NPs in the a-Si:H matrix. The TEM results show successful co-deposition of size-controlled Si-NPs in the a-Si:H matrix, which is meaningful because it suggests the possibility of further enhancement of the a-Si:H solar-cell structure and of tandem structure applications by using a single element.