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- Kim, Kyung Rok
- Nano-Electronic Emerging Devices Lab.
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| DC Field | Value | Language |
|---|---|---|
| dc.citation.conferencePlace | IT | - |
| dc.citation.conferencePlace | Rome | - |
| dc.citation.title | 2015 15th International Conference On Nanotechnology | - |
| dc.contributor.author | Ryu, Min Woo | - |
| dc.contributor.author | Lee, Jeong Seop | - |
| dc.contributor.author | Kim, Kwan Sung | - |
| dc.contributor.author | Yang, Jong-Ryul | - |
| dc.contributor.author | Han, Seong-Tae | - |
| dc.contributor.author | Kim, Kyung Rok | - |
| dc.date.accessioned | 2023-12-19T22:08:18Z | - |
| dc.date.available | 2023-12-19T22:08:18Z | - |
| dc.date.created | 2015-11-26 | - |
| dc.date.issued | 2015-07-28 | - |
| dc.description.abstract | In this paper, we report the high-performance plasmonic terahertz (THz) detector based on antenna-coupled asymmetric nano-CMOS structure. For maximizing performance enhancement by nano-CMOS technology, asymmetric MOSFET is newly designed on a self-aligned gate structure and verticallyintegrated patch antenna in 65-nm CMOS technology. Finally, we obtained the highly enhanced detection performance with responsivity (Rv) of 1.5 kV/W and noise-equivalent-power (NEP) of 15 pW/Hz0.5 at 0.2 THz. | - |
| dc.identifier.bibliographicCitation | 2015 15th International Conference On Nanotechnology | - |
| dc.identifier.doi | 10.1109/NANO.2015.7388686 | - |
| dc.identifier.scopusid | 2-s2.0-84964330355 | - |
| dc.identifier.uri | https://scholarworks.unist.ac.kr/handle/201301/34984 | - |
| dc.identifier.url | https://ieeexplore.ieee.org/document/7388686 | - |
| dc.language | 영어 | - |
| dc.publisher | IEEE | - |
| dc.title.alternative | High-Performance Plasmonic THz Detector by Monolithic Integration of Asymmetric FET-Antenna in 65-nm CMOS Technology | - |
| dc.title | High-performance of asymmetric FET-based plasmonic THz detector with vertically-integrated antenna in 65-nm CMOS technology | - |
| dc.type | Conference Paper | - |
| dc.date.conferenceDate | 2015-07-27 | - |
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