High-Performance Phototransistors Based on Single-Crystalline n-Channel Organic Nanowires and Photogenerated Charge-Carrier Behaviors
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- High-Performance Phototransistors Based on Single-Crystalline n-Channel Organic Nanowires and Photogenerated Charge-Carrier Behaviors
- Yu, Hojeong; Bao, Zhenan; Oh, Joon Hak
- Charge accumulation; Charge release; Charge-carrier mobility; Deep traps; Defect-free; Diimide; External quantum efficiency; Light irradiations; Mobility enhancement; N-channel; Optical power density; Organic nanowires; Organic phototransistors; organic single-crystals; Photoactive layers; Photoactive materials; Photoconductive gains; Photoelectronic properties; Photoresponsivity; Photoswitching; Release rate; Single-crystalline
- Issue Date
- WILEY-V C H VERLAG GMBH
- ADVANCED FUNCTIONAL MATERIALS, v.23, no.5, pp.629 - 639
- The photoelectronic characteristics of single-crystalline nanowire organic phototransistors (NW-OPTs) are studied using a high-performance n-channel organic semiconductor, N,N-bis(2-phenylethyl)-perylene-3,4:9,10-tetracarboxylic diimide (BPE-PTCDI), as the photoactive layer. The optoelectronic performances of the NW-OPTs are analyzed by way of their currentvoltage (IV) characteristics on irradiation at different wavelengths, and comparison with corresponding thin-film organic phototransistors (OPTs). Significant enhancement in the charge-carrier mobility of NW-OPTs is observed upon light irradiation as compared with when performed in the dark. A mobility enhancement is observed when the incident optical power density increases and the wavelength of the light source matches the light-absorption range of the photoactive material. The photoswitching ratio is strongly dependent upon the incident optical power density, whereas the photoresponsivity is more dependent on matching the light-source wavelength with the maximum absorption range of the photoactive material. BPE-PTCDI NW-OPTs exhibit much higher external quantum efficiency (EQE) values (approximate to 7900 times larger) than thin-film OPTs, with a maximum EQE of 263 000%. This is attributed to the intrinsically defect-free single-crystalline nature of the BPE-PTCDI NWs. In addition, an approach is devised to analyze the charge-transport behaviors using charge accumulation/release rates from deep traps under on/off switching of external light sources.
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