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DC Field | Value | Language |
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dc.citation.endPage | 748 | - |
dc.citation.number | 2 | - |
dc.citation.startPage | 743 | - |
dc.citation.title | NANO LETTERS | - |
dc.citation.volume | 12 | - |
dc.contributor.author | Kim, TaeYoung | - |
dc.contributor.author | Kirn, Hyeongkeun | - |
dc.contributor.author | Kwon, Soon Woo | - |
dc.contributor.author | Kim, Yena | - |
dc.contributor.author | Park, Won Kyu | - |
dc.contributor.author | Yoon, Dae Ho | - |
dc.contributor.author | Jang, A-Rang | - |
dc.contributor.author | Shin, Hyeon Suk | - |
dc.contributor.author | Suh, Kwang S. | - |
dc.contributor.author | Yang, Woo Seok | - |
dc.date.accessioned | 2023-12-22T05:36:16Z | - |
dc.date.available | 2023-12-22T05:36:16Z | - |
dc.date.created | 2013-06-20 | - |
dc.date.issued | 2012-02 | - |
dc.description.abstract | We report on a method for the large-scale production of graphene micropatterns by a self-assembly mediated process. The evaporation-induced self-assembly technique was engineered to produce highly ordered graphene patterns on flexible substrates in a simplified and scalable manner. The crossed stripe graphene patterns have been produced over a large area with regions consisting of single- and two-layer graphene. Based on these graphene patterns, flexible graphene-based field effect transistors have been fabricated with an ion-gel gate dielectric, which operates at low voltages of < 2 V with a hole and electron mobility of 214 and 106 cm(2)/V.s, respectively. The self-assembly approach described here may pave the way for the nonlithographic production of graphene patterns, which is scalable to large areas and compatible with roll-to-roll system. | - |
dc.identifier.bibliographicCitation | NANO LETTERS, v.12, no.2, pp.743 - 748 | - |
dc.identifier.doi | 10.1021/nl203691d | - |
dc.identifier.issn | 1530-6984 | - |
dc.identifier.scopusid | 2-s2.0-84856954442 | - |
dc.identifier.uri | https://scholarworks.unist.ac.kr/handle/201301/3419 | - |
dc.identifier.url | http://www.scopus.com/inward/record.url?partnerID=HzOxMe3b&scp=84856954442 | - |
dc.identifier.wosid | 000299967800036 | - |
dc.language | 영어 | - |
dc.publisher | AMER CHEMICAL SOC | - |
dc.title | Large-Scale Graphene Micropatterns via Self-Assembly-Mediated Process for Flexible Device Application | - |
dc.type | Article | - |
dc.relation.journalWebOfScienceCategory | Chemistry, Multidisciplinary; Chemistry, Physical; Nanoscience & Nanotechnology; Materials Science, Multidisciplinary; Physics, Applied; Physics, Condensed Matter | - |
dc.relation.journalResearchArea | Chemistry; Science & Technology - Other Topics; Materials Science; Physics | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.subject.keywordAuthor | Graphene | - |
dc.subject.keywordAuthor | self-assembly | - |
dc.subject.keywordAuthor | patterning | - |
dc.subject.keywordAuthor | large-area | - |
dc.subject.keywordAuthor | flexible electronics | - |
dc.subject.keywordAuthor | field effect transistor | - |
dc.subject.keywordPlus | FIELD-EFFECT TRANSISTORS | - |
dc.subject.keywordPlus | GEL GATE DIELECTRICS | - |
dc.subject.keywordPlus | CHEMICAL-VAPOR-DEPOSITION | - |
dc.subject.keywordPlus | THIN-FILM TRANSISTORS | - |
dc.subject.keywordPlus | FEW-LAYER GRAPHENE | - |
dc.subject.keywordPlus | CONTROLLED EVAPORATION | - |
dc.subject.keywordPlus | CONFINED MICROFLUIDS | - |
dc.subject.keywordPlus | RAMAN-SPECTROSCOPY | - |
dc.subject.keywordPlus | LOW-VOLTAGE | - |
dc.subject.keywordPlus | LARGE-AREA | - |
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