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신현석

Shin, Hyeon Suk
Lab for Carbon and 2D Materials
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Large-Scale Graphene Micropatterns via Self-Assembly-Mediated Process for Flexible Device Application

Author(s)
Kim, TaeYoungKirn, HyeongkeunKwon, Soon WooKim, YenaPark, Won KyuYoon, Dae HoJang, A-RangShin, Hyeon SukSuh, Kwang S.Yang, Woo Seok
Issued Date
2012-02
DOI
10.1021/nl203691d
URI
https://scholarworks.unist.ac.kr/handle/201301/3419
Fulltext
http://www.scopus.com/inward/record.url?partnerID=HzOxMe3b&scp=84856954442
Citation
NANO LETTERS, v.12, no.2, pp.743 - 748
Abstract
We report on a method for the large-scale production of graphene micropatterns by a self-assembly mediated process. The evaporation-induced self-assembly technique was engineered to produce highly ordered graphene patterns on flexible substrates in a simplified and scalable manner. The crossed stripe graphene patterns have been produced over a large area with regions consisting of single- and two-layer graphene. Based on these graphene patterns, flexible graphene-based field effect transistors have been fabricated with an ion-gel gate dielectric, which operates at low voltages of < 2 V with a hole and electron mobility of 214 and 106 cm(2)/V.s, respectively. The self-assembly approach described here may pave the way for the nonlithographic production of graphene patterns, which is scalable to large areas and compatible with roll-to-roll system.
Publisher
AMER CHEMICAL SOC
ISSN
1530-6984
Keyword (Author)
Grapheneself-assemblypatterninglarge-areaflexible electronicsfield effect transistor
Keyword
FIELD-EFFECT TRANSISTORSGEL GATE DIELECTRICSCHEMICAL-VAPOR-DEPOSITIONTHIN-FILM TRANSISTORSFEW-LAYER GRAPHENECONTROLLED EVAPORATIONCONFINED MICROFLUIDSRAMAN-SPECTROSCOPYLOW-VOLTAGELARGE-AREA

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