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Kim, Kyung Rok
Nano-Electronic Emerging Devices (NEEDs) Lab
Research Interests
  • Nano-CMOS, neuromorphic device, terahertz (THz) plasma-wave transistor (PWT)

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RF Performance and Small-Signal Parameter Extraction of Junctionless Silicon Nanowire MOSFETs

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Title
RF Performance and Small-Signal Parameter Extraction of Junctionless Silicon Nanowire MOSFETs
Author
Cho, SeongjaeKim, Kyung RokPark, Byung-GookKang, In Man
Keywords
Device simulations; junctionless (JL); metaloxidesemiconductor field-effect transistor (MOSFET); modeling; Non quasi static; radio frequency (RF); silicon nanowire (SNW)
Issue Date
201105
Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
Citation
IEEE TRANSACTIONS ON ELECTRON DEVICES, v.58, no.5, pp.1388 - 1396
Abstract
This paper presents a radio-frequency (RF) model and extracted model parameters for junctionless silicon nanowire (JLSNW) metal-oxide-semiconductor field-effect transistors (MOSFETs) using a 3-D device simulator. JLSNW MOSFETs are evaluated for various RF parameters such as cutoff frequency f(T), gate input capacitance, distributed channel resistances, transport time delay, and capacitance by the drain-induced barrier lowering effect. Direct comparisons of high-frequency performances and extracted parameters are made with conventional silicon nanowire MOSFETs. A non-quasi-static RF model has been used, along with SPICE to simulate JLSNW MOSFETs with RF parameters extracted from 3-D-simulated Y-parameters. The results show excellent agreements with the 3-D-simulated results up to the high frequency of f(T).
URI
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DOI
http://dx.doi.org/10.1109/TED.2011.2109724
ISSN
0018-9383
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ECE_Journal Papers

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