There are no files associated with this item.
Full metadata record
DC Field | Value | Language |
---|---|---|
dc.citation.number | 6 | - |
dc.citation.startPage | 064101 | - |
dc.citation.title | JOURNAL OF APPLIED PHYSICS | - |
dc.citation.volume | 109 | - |
dc.contributor.author | Yum, J. H. | - |
dc.contributor.author | Akyol, T. | - |
dc.contributor.author | Lei, M. | - |
dc.contributor.author | Hudnall, T. | - |
dc.contributor.author | Bersuker, G. | - |
dc.contributor.author | Downer, M. | - |
dc.contributor.author | Bielawski, C. W. | - |
dc.contributor.author | Lee, J. C. | - |
dc.contributor.author | Banerjee, S. K. | - |
dc.date.accessioned | 2023-12-22T06:14:23Z | - |
dc.date.available | 2023-12-22T06:14:23Z | - |
dc.date.created | 2020-07-13 | - |
dc.date.issued | 2011-03 | - |
dc.description.abstract | Electrical and physical characteristics of the atomic layer deposited beryllium oxide (BeO) grown on the Si and GaAs substrates were evaluated as a barrier/passivation layer in the III-V devices. Compared to Al2O3, BeO exhibits lower interface defect density and hysteresis, and smaller frequency dispersion and leakage current density at the same effective oxide thickness, as well as an excellent self-cleaning effect. These dielectric characteristics combined with its advantageous intrinsic properties, such as high thermal stability, large energy band-gap(10.6 eV), effective diffusion barrier, and low intrinsic structural defects, make BeO an excellent candidate for the interfacial passivation layer applications in the channel III-V devices. | - |
dc.identifier.bibliographicCitation | JOURNAL OF APPLIED PHYSICS, v.109, no.6, pp.064101 | - |
dc.identifier.doi | 10.1063/1.3553872 | - |
dc.identifier.issn | 0021-8979 | - |
dc.identifier.scopusid | 2-s2.0-79953665183 | - |
dc.identifier.uri | https://scholarworks.unist.ac.kr/handle/201301/33196 | - |
dc.identifier.url | https://aip.scitation.org/doi/10.1063/1.3553872 | - |
dc.identifier.wosid | 000289149900097 | - |
dc.language | 영어 | - |
dc.publisher | AMER INST PHYSICS | - |
dc.title | Atomic layer deposited beryllium oxide: Effective passivation layer for III-V metal/oxide/semiconductor devices | - |
dc.type | Article | - |
dc.description.isOpenAccess | FALSE | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.relation.journalResearchArea | Physics | - |
dc.type.docType | Article | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
Items in Repository are protected by copyright, with all rights reserved, unless otherwise indicated.
Tel : 052-217-1404 / Email : scholarworks@unist.ac.kr
Copyright (c) 2023 by UNIST LIBRARY. All rights reserved.
ScholarWorks@UNIST was established as an OAK Project for the National Library of Korea.