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Flexible FET-Type VEGF Aptasensor Based on Nitrogen-Doped Graphene Converted from Conducting Polymer

Author(s)
Kwon, Oh SeokPark, Seon JooHong, Jin-YongHan, A-ReumLee, Jun SeopLee, James S.Oh, Joon HakJang, Jyongsik
Issued Date
2012-02
DOI
10.1021/nn204395n
URI
https://scholarworks.unist.ac.kr/handle/201301/3206
Fulltext
http://www.scopus.com/inward/record.url?partnerID=HzOxMe3b&scp=84857692367
Citation
ACS NANO, v.6, no.2, pp.1486 - 1493
Abstract
Graphene-based field-effect transistors (FETs) have been developed rapidly and are currently considered as an alternative for postsilicon electronics. In this study, polypyrrole-converted nitrogen-doped few-layer graphene (PPy-NDFLG) was grown on Cu substrate by chemical vapor deposition combined with vapor deposition polymerization and then transferred onto a flexible substrate. Furthermore, antivascular endothelial growth factor (VEGF) RNA aptamer conjugated PPy-NDFLG was integrated Into a liquid-ion gated FET geometry to fabricate a high-performance VEGF aptamer-based sensor. Field-induced high sensitivity was observed for the analyte-binding events, eventually leading to the recognition of the target molecules at an unprecedentedly low concentration (100 fM). Additionally, the aptasensor had excellent reusability, mechanical bendability, and durability In the flexible process. The developed methodology describes, for the first time, the fabrication of N-doped graphene using conducting polymers including heteroatoms in their structures as the carbonization precursor and demonstrates its use in a high-performance, flexible FET-type aptasensor to detect vascular endothelial growth factor as a cancer biomarker.
Publisher
AMER CHEMICAL SOC
ISSN
1936-0851
Keyword (Author)
nitrogen-doped graphenefield-effect transistorconducting polymeraptasensorvascular endothelial growth factoraptamer

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