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DC Field | Value | Language |
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dc.citation.endPage | 3047 | - |
dc.citation.number | 8 | - |
dc.citation.startPage | 3040 | - |
dc.citation.title | JOURNAL OF THE AMERICAN CHEMICAL SOCIETY | - |
dc.citation.volume | 136 | - |
dc.contributor.author | Zhang, Xiuyun | - |
dc.contributor.author | Wang, Lu | - |
dc.contributor.author | Xin, John | - |
dc.contributor.author | Yakobson, Boris I. | - |
dc.contributor.author | Ding, Feng | - |
dc.date.accessioned | 2023-12-22T03:06:27Z | - |
dc.date.available | 2023-12-22T03:06:27Z | - |
dc.date.created | 2020-03-04 | - |
dc.date.issued | 2014-02 | - |
dc.description.abstract | Synthesizing bilayer graphene (BLG), which has a band gap, is an important step in graphene application in microelectronics. Experimentally, it was broadly observed that hydrogen plays a crucial role in graphene chemical vapor deposition (CVD) growth on a copper surface. Here, by using ab initio calculations, we have revealed a crucial role of hydrogen in graphene CVD growth, terminating the graphene edges. Our study demonstrates the following. (i) At a low hydrogen pressure, the graphene edges are not passivated by H and thus tend to tightly attach to the catalyst surface. As a consequence, the diffusion of active C species into the area beneath the graphene top layer (GTL) is prohibited, and therefore, single-layer graphene growth is favored. (ii) At a high hydrogen pressure, the graphene edges tend to be terminated by H, and therefore, its detachment from the catalyst surface favors the diffusion of active C species into the area beneath the GTL to form the adlayer graphene below the GTL; as a result, the growth of BLG or few-layer graphene (FLG) is preferred. This insightful understanding reveals a crucial role of H in graphene CVD growth and paves a way for the controllable synthesis of BLG or FLG. Besides, this study also provides a reasonable explanation for the hydrogen pressure-dependent graphene CVD growth behaviors on a Cu surface. | - |
dc.identifier.bibliographicCitation | JOURNAL OF THE AMERICAN CHEMICAL SOCIETY, v.136, no.8, pp.3040 - 3047 | - |
dc.identifier.doi | 10.1021/ja405499x | - |
dc.identifier.issn | 0002-7863 | - |
dc.identifier.scopusid | 2-s2.0-84896877634 | - |
dc.identifier.uri | https://scholarworks.unist.ac.kr/handle/201301/31339 | - |
dc.identifier.url | https://pubs.acs.org/doi/10.1021/ja405499x | - |
dc.identifier.wosid | 000332144300028 | - |
dc.language | 영어 | - |
dc.publisher | AMER CHEMICAL SOC | - |
dc.title | Role of Hydrogen in Graphene Chemical Vapor Deposition Growth on a Copper Surface | - |
dc.type | Article | - |
dc.description.isOpenAccess | FALSE | - |
dc.relation.journalWebOfScienceCategory | Chemistry, Multidisciplinary | - |
dc.relation.journalResearchArea | Chemistry | - |
dc.type.docType | Article | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.subject.keywordPlus | INITIAL-STAGE | - |
dc.subject.keywordPlus | KINETICS | - |
dc.subject.keywordPlus | FILMS | - |
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