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dc.citation.endPage 29334 -
dc.citation.number 43 -
dc.citation.startPage 29327 -
dc.citation.title PHYSICAL CHEMISTRY CHEMICAL PHYSICS -
dc.citation.volume 17 -
dc.contributor.author Zhao, Ruiqi -
dc.contributor.author Li, Feifei -
dc.contributor.author Liu, Zhirong -
dc.contributor.author Liuc, Zhongfan -
dc.contributor.author Ding, Feng -
dc.date.accessioned 2023-12-22T00:36:39Z -
dc.date.available 2023-12-22T00:36:39Z -
dc.date.created 2020-03-01 -
dc.date.issued 2015-11 -
dc.description.abstract Edge structure and stability are crucial in determining both the morphology and the growth behaviours of hexagonal boron nitride (h-BN) domains in chemical vapour deposition (CVD) growth under near thermal equilibrium conditions. In this study, various edges of h-BN on three typical transition metal surfaces used for h-BN's CVD growth, Cu(111), Ni(111) and Rh(111), are explored with density functional theory calculations. Different from that in vacuum, our study shows that the formation of non-hexagonal rings, such as pentagon, heptagon or their pairs, is energetically not preferred and both zigzag (ZZ) edges are more stable than the armchair (AC) edge on all the explored catalyst surfaces under typical conditions of h-BN's CVD growth, which explains the broad experimental observation of triangular h-BN domains. More importantly, our results indicate that, instead of the pristine ZZ edge terminated with nitrogen atoms (ZZN), the triangular BN domains observed in experiments are likely to be enclosed with ZZ Klein edges having dangling atoms, ZZB + N or ZZN + B. By applying the theory of Wulff construction, we predicted that the equilibrium shape of a BN domain could be a hexagon enclosed with nitrogen-rich AC edges, triangles enclosed with two different types of ZZ Klein edges or a hexagon enclosed with boron-rich AC edges if the growth is in a N-rich, neutral or B-rich environment, respectively. This study presents how the edges and equilibrium shapes of h-BN domains can be controlled during the CVD synthesis and provides guidelines for further exploring the growth behaviours and improving the quality of CVD-prepared h-BN films. -
dc.identifier.bibliographicCitation PHYSICAL CHEMISTRY CHEMICAL PHYSICS, v.17, no.43, pp.29327 - 29334 -
dc.identifier.doi 10.1039/c5cp04833h -
dc.identifier.issn 1463-9076 -
dc.identifier.scopusid 2-s2.0-84946037965 -
dc.identifier.uri https://scholarworks.unist.ac.kr/handle/201301/31253 -
dc.identifier.url https://pubs.rsc.org/en/content/articlelanding/2015/CP/C5CP04833H#!divAbstract -
dc.identifier.wosid 000364024100096 -
dc.language 영어 -
dc.publisher ROYAL SOC CHEMISTRY -
dc.title The transition metal surface passivated edges of hexagonal boron nitride (h-BN) and the mechanism of h-BN's chemical vapor deposition (CVD) growth -
dc.type Article -
dc.description.isOpenAccess FALSE -
dc.relation.journalWebOfScienceCategory Chemistry, Physical; Physics, Atomic, Molecular & Chemical -
dc.relation.journalResearchArea Chemistry; Physics -
dc.type.docType Article -
dc.description.journalRegisteredClass scie -
dc.description.journalRegisteredClass scopus -
dc.subject.keywordPlus GRAPHENE -
dc.subject.keywordPlus CRYSTALLINE -
dc.subject.keywordPlus NANOMESH -
dc.subject.keywordPlus LAYER -

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