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Growth of Close-Packed Semiconducting Single-Walled Carbon Nanotube Arrays Using Oxygen-Deficient TiO2 Nanoparticles as Catalysts

Author(s)
Kang, LixingHu, YueLiu, LiliWu, JuanxiaZhang, ShuchenZhao, QiuchenDing, FengLi, QingwenZhang, Jin
Issued Date
2015-01
DOI
10.1021/nl5037325
URI
https://scholarworks.unist.ac.kr/handle/201301/31247
Fulltext
https://pubs.acs.org/doi/10.1021/nl5037325
Citation
NANO LETTERS, v.15, no.1, pp.403 - 409
Abstract
For the application of single-walled carbon nanotubes (SWNTs) in nanoelectronic devices, techniques to obtain horizontally aligned semiconducting SWNTs (s-SWNTs) with higher densities are still in their infancy. We reported herein a rational approach for the preferential growth of densely packed and well-aligned s-SWNTs arrays using oxygen-deficient TiO2 nanoparticles as catalysts. Using this approach, a suitable concentration of oxygen vacancies in TiO2 nanoparticles could form by optimizing the flow rate of hydrogen and carbon sources during the process of SWNT growth, and then horizontally aligned SWNTs with the density of similar to 10 tubes/mu m and the s-SWNT percentage above 95% were successfully obtained on ST-cut quartz substrates. Theoretical calculations indicated that TiO2 nanoparticles with a certain concentration of oxygen vacancies have a lower formation energy between s-SWNT than metallic SWNT (m-SWNT), thus realizing the preferential growth of s-SWNT arrays. Furthermore, this method can also be extended to other semiconductor oxide nanoparticles (i.e., ZnO, ZrO2 and Cr2O3) for the selective growth of s-SWNTs, showing clear potential to the future applications in nanoelectronics.
Publisher
AMER CHEMICAL SOC
ISSN
1530-6984
Keyword (Author)
Semiconducting single-walled carbon nanotube arraysoxygen vacancypreferential growthtitanium dioxide catalysts
Keyword
CHEMICAL-VAPOR-DEPOSITIONTOTAL-ENERGY CALCULATIONSWAVE BASIS-SETSELECTIVE SYNTHESISLARGE-DIAMETERHIGH-DENSITYMETALCHIRALITYPHOTOCATALYSISELECTRONICS

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