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DC Field | Value | Language |
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dc.citation.endPage | 108 | - |
dc.citation.startPage | 103 | - |
dc.citation.title | SYNTHETIC METALS | - |
dc.citation.volume | 185 | - |
dc.contributor.author | Na, Hanah | - |
dc.contributor.author | Shin, Tae Joo | - |
dc.contributor.author | Sim, Kyoseung | - |
dc.contributor.author | Chirawatkul, Prae | - |
dc.contributor.author | Kim, Sangwook | - |
dc.contributor.author | Heo, Kwan-Jun | - |
dc.contributor.author | Kim, Sung-Jin | - |
dc.contributor.author | Pyo, Seungmoon | - |
dc.date.accessioned | 2023-12-22T03:10:10Z | - |
dc.date.available | 2023-12-22T03:10:10Z | - |
dc.date.created | 2020-01-23 | - |
dc.date.issued | 2013-12 | - |
dc.description.abstract | N-type low-voltage organic field-effect transistors (OFETs) were fabricated using copper hexadecafluorophthalocyanine (F16CuPc) and aluminum oxide (Al2O3) as a semiconductor and gate dielectric. respectively. The Al2O3 gate dielectric (30 nm) was grown by atomic layer deposition (ALD) and F16CuPc thin-film was deposited through a thermal vacuum evaporation method over the bare or self-assembled monolayer treated Al2O3 gate dielectric. The electrical characteristics of the gate dielectric were investigated using a metal-insulator-metal capacitor type device. The molecular arrangements and crystallographic analysis of the F16CuPc thin-film formed on the gate dielectric were carried out in detail using an atomic force microscope (AFM) and grazing incidence X-ray diffraction (GIXD) experiments. The crystal growth mode varies depending on the surface properties of the nano-gate dielectric. The nano-gate dielectric affects the molecular arrangement and crystal size in the thin-film and lead to the difference in device performance. The average field-effect mobility of the device based on a self-assembled monolayer treated gate dielectric was 2.21 x 10(-3) cm(2)/Vs with negligible hysteresis under forward and reverse bias conditions. | - |
dc.identifier.bibliographicCitation | SYNTHETIC METALS, v.185, pp.103 - 108 | - |
dc.identifier.doi | 10.1016/j.synthmet.2013.09.033 | - |
dc.identifier.issn | 0379-6779 | - |
dc.identifier.scopusid | 2-s2.0-84887473645 | - |
dc.identifier.uri | https://scholarworks.unist.ac.kr/handle/201301/30874 | - |
dc.identifier.url | https://www.sciencedirect.com/science/article/pii/S0379677913004815?via%3Dihub | - |
dc.identifier.wosid | 000329547700016 | - |
dc.language | 영어 | - |
dc.publisher | ELSEVIER SCIENCE SA | - |
dc.title | Growth of n-type organic semiconductor for low-voltage transistors based on an ALD grown Al2O3 gate dielectric | - |
dc.type | Article | - |
dc.description.isOpenAccess | FALSE | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Multidisciplinary; Physics, Condensed Matter; Polymer Science | - |
dc.relation.journalResearchArea | Materials Science; Physics; Polymer Science | - |
dc.type.docType | Article | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.subject.keywordAuthor | Metal oxide gate dielectric | - |
dc.subject.keywordAuthor | Self-assembled monolayer | - |
dc.subject.keywordAuthor | Atomic layer deposition | - |
dc.subject.keywordAuthor | Organic semiconductor | - |
dc.subject.keywordAuthor | Organic field-effect transistor | - |
dc.subject.keywordPlus | FIELD-EFFECT TRANSISTORS | - |
dc.subject.keywordPlus | THIN-FILM TRANSISTORS | - |
dc.subject.keywordPlus | PERFORMANCE | - |
dc.subject.keywordPlus | LAYER | - |
dc.subject.keywordPlus | INSULATORS | - |
dc.subject.keywordPlus | MORPHOLOGY | - |
dc.subject.keywordPlus | INVERTERS | - |
dc.subject.keywordPlus | POLYMER | - |
dc.subject.keywordPlus | F16CUPC | - |
dc.subject.keywordPlus | MATRIX | - |
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