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Kim, Jaeup U.
Nanostructured Polymer Materials Theory Lab
Research Interests
  • block copolymers, soft matter, nanostructures & patterning, machine learning

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Diblock and triblock copolymer thin films on a substrate with controlled selectivity

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Title
Diblock and triblock copolymer thin films on a substrate with controlled selectivity
Author
Yang, Y.-B.Jeon, Y. M.Kim, Jaeup U.Cho, J.
Keywords
AB diblock copolymers; ABC triblock copolymers; Copolymer films; Diblocks; Domain pattern; Microelectronic process; Morphology development; Nano pattern; Pattern transfers; Potential applications; Self-consistent-field theory; Square patterns; Substrate selectivity; Triblock copolymer thin films; Ultrahigh density storage
Issue Date
201209
Publisher
SPRINGER
Citation
EUROPEAN PHYSICAL JOURNAL E, v.35, no.9, pp.1 - 10
Abstract
Using self-consistent field theory (SCFT), morphology development in symmetric linear ABC triblock copolymer films on neutral and selective substrates has been studied, and it is compared with the triblock copolymer morphologies in bulk. In particular, the effects of the substrate preferable to B (interior) block on nanopattern formation of the copolymer films are of our central interest. Here, we report various nanopatterns with tunable square morphologies. The domain patterns are much more diverse than those parallel to the substrate with substrate selectivity for end-block or those vertical to the substrate without substrate selectivity. Furthermore, in order to figure out an economical and efficient way to fabricate useful passive pattern transfer layers, which have potential applications in microelectronic processes and ultrahigh density storage media, we propose a two-step strategy and scrutinize the conditions for generating square symmetries using cylinder-forming or lamella-forming AB diblock copolymers deposited on substrates created from ABC triblock copolymer films. It is found that a thinner film with weak incompatibility can produce square patterns.
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DOI
http://dx.doi.org/10.1140/epje/i2012-12086-9
ISSN
1292-8941
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