BROWSE

Related Researcher

Author

Jeong, Hu Young
UNIST Central Research Facilities (UCRF)
Research Interests
  • Soft material characterization such as graphene using a low kV Cs-corrected TEM

ITEM VIEW & DOWNLOAD

Engineering Electronic Properties of Graphene by Coupling with Si-Rich, Two-Dimensional Islands

Cited 3 times inthomson ciCited 2 times inthomson ci
Title
Engineering Electronic Properties of Graphene by Coupling with Si-Rich, Two-Dimensional Islands
Author
Lee, Dong HyunYi, JaeseokLee, Jung MinLee, Sang JunDoh, Yong-JooJeong, Hu YoungLee, ZonghoonPaik, UngyuRogers, John A.Park, Won II
Keywords
Band gap engineering; Current levels; Current-voltage measurements; Dirac point; Enhanced transconductance; Experimental studies; Graphene sheets; Lateral sizes; Optical spectroscopy; Si layer; Silicon islands; Sub-lattices; Sublattice symmetry; Temperature dependent; Two-dimensional (2D) islands; Ultra-thin; Van der waals; Van Der Waals interactions
Issue Date
201301
Publisher
AMER CHEMICAL SOC
Citation
ACS NANO, v.7, no.1, pp.301 - 307
Abstract
Recent theoretical and experimental studies demonstrated that breaking of the sublattice symmetry in graphene produces an energy gap at the former Dirac point. We describe the synthesis of graphene sheets decorated with ultrathin, Si-rich two-dimensional (2D) islands (i.e., Gr:Si sheets), in which the electronic property of graphene is modulated by coupling with the Si-islands. Analyses based on transmission electron microscopy, atomic force microscopy, and electron and optical spectroscopies confirmed that Si-islands with thicknesses of similar to 2 to 4 nm and a lateral size of several tens of nm were bonded to graphene via van der Waals interactions. Field-effect transistors (FETs) based on Gr:Si sheets exhibited enhanced transconductance and maximum-to-minimum current level compared to bare-graphene FETs, and their magnitudes gradually increased with increasing coverage of Si layers on the graphene. The temperature dependent current voltage measurements of the Gr:Si sheet showed approximately a 2-fold increase in the resistance by decreasing the temperature from 250 to 10K, which confirmed the opening of the substantial bandgap (similar to 2.5-3.2 meV) in graphene by coupling with Si Islands.
URI
Go to Link
DOI
http://dx.doi.org/10.1021/nn304007x
ISSN
1936-0851
Appears in Collections:
UCRF_Journal Papers
MSE_Journal Papers

find_unist can give you direct access to the published full text of this article. (UNISTARs only)

Show full item record

qr_code

  • mendeley

    citeulike

Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.

MENU