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Jeong, Hu Young
UNIST Central Research Facilities (UCRF)
Research Interests
  • Soft material characterization such as graphene using a low kV Cs-corrected TEM

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Flexible Memristive Memory Array on Plastic Substrates

Cited 63 times inthomson ciCited 50 times inthomson ci
Title
Flexible Memristive Memory Array on Plastic Substrates
Author
Kim, SeungjunJeong, Hu YoungKim, Sung KyuChoi, Sung-YoolLee, Keon Jae
Keywords
1T-1M; E-papers; Electrical interference; Electronic application; Electronic systems; Flexible electronic systems; Flexible substrate; Key elements; Memory array; Memory cell; Memory technology; Memristor; Non-volatile memories; Non-volatile memory application; Plastic substrates; Random access; Resistive random access memory; Resistive switching memories; RRAM; Single crystal silicon
Issue Date
201112
Publisher
AMER CHEMICAL SOC
Citation
NANO LETTERS, v.11, no.12, pp.5438 - 5442
Abstract
The demand for flexible electronic systems such as wearable computers, E-paper, and flexible displays has recently increased due to their advantages over present rigid electronic systems. Flexible memory is an essential part of electronic systems for data processing, storage, and communication and thus a key element to realize such flexible electronic systems. Although several emerging memory technologies, including resistive switching memory, have been proposed, the cell-to-cell interference issue has to be overcome for flexible and high performance nonvolatile memory applications. This paper describes the development of NOR type flexible resistive random access memory (RRAM) with a one transistor-one memristor structure (1T-1M). By integration of a high-performance single crystal silicon transistor with a titanium oxide based memristor, random access to memory cells on flexible substrates was achieved without any electrical interference from adjacent cells. The work presented here can provide a new approach to high-performance nonvolatile memory for flexible electronic applications.
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DOI
http://dx.doi.org/10.1021/nl203206h
ISSN
1530-6984
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