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Solution-Shear-Processed Quaterrylene Diimide Thin-Film Transistors Prepared by Pressure-Assisted Thermal Cleavage of Swallow Tails

Author(s)
Oh, Joon HakLee, Wen-YaNoe, TorstenChen, Wen-ChangKoenemann, MartinBao, Zhenan
Issued Date
2011-03
DOI
10.1021/ja110486s
URI
https://scholarworks.unist.ac.kr/handle/201301/2925
Fulltext
http://www.scopus.com/inward/record.url?partnerID=HzOxMe3b&scp=79953035485
Citation
JOURNAL OF THE AMERICAN CHEMICAL SOCIETY, v.133, no.12, pp.4204 - 4207
Abstract
A scalable synthesis of swallow-tailed quaterrylene diimides (STQDIs) and a method for the solution processing of sparingly soluble quaterrylene diimide (QDI) thin films are described. The pressure-assisted thermal cleavage of swallow tails yields crystalline QDI layers with electron mobility up to 0.088 cm(2) V(-1) s(-1). The developed method opens up a new route toward the solution processing of higher rylene diimides with poor solubility.
Publisher
AMER CHEMICAL SOC
ISSN
0002-7863

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