There are no files associated with this item.
Full metadata record
DC Field | Value | Language |
---|---|---|
dc.citation.number | 10 | - |
dc.citation.startPage | 10C905 | - |
dc.citation.title | JOURNAL OF APPLIED PHYSICS | - |
dc.citation.volume | 97 | - |
dc.contributor.author | Jeong, WC | - |
dc.contributor.author | Park, JH | - |
dc.contributor.author | Koh, GH | - |
dc.contributor.author | Jeong, GT | - |
dc.contributor.author | Jeong, HS | - |
dc.contributor.author | Kim, K | - |
dc.date.accessioned | 2023-12-22T10:36:31Z | - |
dc.date.available | 2023-12-22T10:36:31Z | - |
dc.date.created | 2019-07-11 | - |
dc.date.issued | 2005-05 | - |
dc.description.abstract | By replacing the traditional single magnetic free layer in magnetic random access memory (MRAM) with a synthetic antiferromagnetic (SAF) layer composed of two antiferromagnetic ally coupled layers, the possibility of the kink generation has been suppressed to a minimum level and the normalized free-layer shift has been reduced from 15% to less than 5%. These phenomena are thought to be from the reduction of the effective thickness and magnetic moment by introducing a SAF free layer. Since the SAF free layer decreases the magnetostatic interaction with the pinned layer, free-layer shift is also decreased. A SAF free layer forms a closed magnetic loop between two antiferromagnetically coupled layers. Therefore, it increases a tendency to become a single domain and its switching, field distribution is enhanced. With the optimized SAF free layer, array quality factor [AQF, sigma(Hc)/Hc] is increased to more than 10 and switching window could be obtained which is the area to be selectively switched in the memory cell array. When adopted in a 64-kb MRAM, it is confirmed that cells can be selectively switched without the disturbance to the other cells. | - |
dc.identifier.bibliographicCitation | JOURNAL OF APPLIED PHYSICS, v.97, no.10, pp.10C905 | - |
dc.identifier.doi | 10.1063/1.1846558 | - |
dc.identifier.issn | 0021-8979 | - |
dc.identifier.scopusid | 2-s2.0-20944443608 | - |
dc.identifier.uri | https://scholarworks.unist.ac.kr/handle/201301/27161 | - |
dc.identifier.url | https://aip.scitation.org/doi/10.1063/1.1846558 | - |
dc.identifier.wosid | 000230168300172 | - |
dc.language | 영어 | - |
dc.publisher | AMER INST PHYSICS | - |
dc.title | Switching field distribution in magnetic tunnel junctions with a synthetic antiferromagnetic free layer | - |
dc.type | Article | - |
dc.description.isOpenAccess | FALSE | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.relation.journalResearchArea | Physics | - |
dc.type.docType | Article; Proceedings Paper | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.subject.keywordPlus | ARRAYS | - |
Items in Repository are protected by copyright, with all rights reserved, unless otherwise indicated.
Tel : 052-217-1404 / Email : scholarworks@unist.ac.kr
Copyright (c) 2023 by UNIST LIBRARY. All rights reserved.
ScholarWorks@UNIST was established as an OAK Project for the National Library of Korea.