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정홍식

Jeong, Hongsik
Future Semiconductor Technology Lab.
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Martensitic transformation in Ge2Sb2Te5 alloy

Author(s)
Zhang, WeiJeong, Hong SikSong, Se Ahn
Issued Date
2008-02
DOI
10.1002/adem.200700230
URI
https://scholarworks.unist.ac.kr/handle/201301/27150
Fulltext
https://onlinelibrary.wiley.com/doi/abs/10.1002/adem.200700230
Citation
ADVANCED ENGINEERING MATERIALS, v.10, no.1-2, pp.67 - 72
Abstract
Phenomenological crystallographic theory of martensitic transformation was applied to the phase transition of PRAM (phase‐change random access memory) Ge2Sb2Te5 alloy for the first time. The speedy structural transition of Ge2Sb2Te5 from cubic to hexagonal phases could be well described by a shearing transformation from cubic {002} to hexagonal {‐113} besides the removal of vacancies. This model shows good consistency with crystallographic models, X‐ray diffraction analysis, ab initio total energy and density‐functional theory calculations of Ge2Sb2Te5.
Publisher
WILEY-V C H VERLAG GMBH
ISSN
1438-1656
Keyword
TRANSMISSION ELECTRON-MICROSCOPYNONVOLATILE MEMORYTHIN-FILMSPHASEDIFFRACTIONGROWTH

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