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정홍식

Jeong, Hongsik
Future Semiconductor Technology Lab.
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dc.citation.endPage 713 -
dc.citation.number 3 -
dc.citation.startPage 710 -
dc.citation.title CURRENT APPLIED PHYSICS -
dc.citation.volume 11 -
dc.contributor.author Lee, Y. M. -
dc.contributor.author Shin, H. J. -
dc.contributor.author Choi, S. J. -
dc.contributor.author Oh, J. H. -
dc.contributor.author Jeong, H. S. -
dc.contributor.author Kim, K. -
dc.contributor.author Jung, M. -C. -
dc.date.accessioned 2023-12-22T06:10:05Z -
dc.date.available 2023-12-22T06:10:05Z -
dc.date.created 2019-07-11 -
dc.date.issued 2011-05 -
dc.description.abstract Chemical states of N-doped GeTe (N: 8.4 at.%) thin film (NGT) in structural phase transition were investigated by near-edge x-ray absorption of fine structure and high-resolution x-ray photoelectron spectroscopy with synchrotron radiation. We found the NaCl-like structure in NGT by x-ray diffraction at around 300 degrees C. Preparatory to the analysis of chemical states, after mild Ne+ sputtering we obtained clean amorphous NGT, which showed the N-2 vibration mode peak in the N K-edge absorption spectrum. After annealing, the N-2 molecular peak disappeared completely and we assumed that nitrogen was contributed only to the Ge atom in structural phase transition by analyzing Ge 3d and Te 4d core-levels. -
dc.identifier.bibliographicCitation CURRENT APPLIED PHYSICS, v.11, no.3, pp.710 - 713 -
dc.identifier.doi 10.1016/j.cap.2010.11.036 -
dc.identifier.issn 1567-1739 -
dc.identifier.scopusid 2-s2.0-79951675366 -
dc.identifier.uri https://scholarworks.unist.ac.kr/handle/201301/27143 -
dc.identifier.url https://www.sciencedirect.com/science/article/pii/S1567173910003986?via%3Dihub -
dc.identifier.wosid 000288183300087 -
dc.language 영어 -
dc.publisher ELSEVIER SCIENCE BV -
dc.title Nitrogen contribution to N-doped GeTe (N: 8.4 at.%) in the structural phase transition -
dc.type Article -
dc.description.isOpenAccess FALSE -
dc.relation.journalWebOfScienceCategory Materials Science, Multidisciplinary; Physics, Applied -
dc.relation.journalResearchArea Materials Science; Physics -
dc.type.docType Article -
dc.description.journalRegisteredClass scie -
dc.description.journalRegisteredClass scopus -
dc.subject.keywordAuthor N-doped GeTe -
dc.subject.keywordAuthor Structural phase transition -
dc.subject.keywordAuthor Chemical state -
dc.subject.keywordAuthor NEXAFS -
dc.subject.keywordAuthor XPS -
dc.subject.keywordPlus X-RAY PHOTOEMISSION -

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