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DC Field | Value | Language |
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dc.citation.endPage | 21827 | - |
dc.citation.number | 39 | - |
dc.citation.startPage | 21819 | - |
dc.citation.title | ACS APPLIED MATERIALS & INTERFACES | - |
dc.citation.volume | 7 | - |
dc.contributor.author | Park, Sungjin | - |
dc.contributor.author | Park, Dambi | - |
dc.contributor.author | Jeong, Kwangsik | - |
dc.contributor.author | Kirn, Taeok | - |
dc.contributor.author | Park, SeungJong | - |
dc.contributor.author | Ahn, Min | - |
dc.contributor.author | Yang, Won Jun | - |
dc.contributor.author | Han, Jeong Hwa | - |
dc.contributor.author | Jeong, Hong Sik | - |
dc.contributor.author | Jeon, Seong Gi | - |
dc.contributor.author | Song, Jae Yong | - |
dc.contributor.author | Cho, Mann-Ho | - |
dc.date.accessioned | 2023-12-22T00:38:37Z | - |
dc.date.available | 2023-12-22T00:38:37Z | - |
dc.date.created | 2019-07-11 | - |
dc.date.issued | 2015-10 | - |
dc.description.abstract | The thermal conduction characteristics of GeTe and Ge2Sb2Te5(GST) nanowires were investigated using an optical method to determine the local temperature by Raman spectroscopy. Since the localization of surface charge in a single-crystalline nanostructure can enhance charge-phonon scattering, the thermal conductivity value (kappa) of single crystalline GeTe and GST nanowires was decreased significantly to 1.44 Wm(-1) K-1 for GeTe and 1.13 Wm(-1) K-1 for GST, compared to reported values for polycrystalline structures. The SET-to-RESET state in single-crystalline GeTe and GST nanowires are characteristic of a memory device. Unlike previous reports using GeTe and GST nanowires, the SET-to-RESET characteristics showed a bipolar switching shape and no unipolar switching. In addition, after multiple cycles of operation, a significant change in morphology and composition was observed without any structural phase transition, indicating that atoms migrate toward the cathode or anode, depending on their electronegativities. This change caused by a field effect indicates that the structural phase transition does not occur in the case of GeTe and GST nanowires with a significantly lowered thermal conductivity and stable crystalline structure. Finally, the formation of voids and hillocks as the result of the electromigration critically degrades device reliability. | - |
dc.identifier.bibliographicCitation | ACS APPLIED MATERIALS & INTERFACES, v.7, no.39, pp.21819 - 21827 | - |
dc.identifier.doi | 10.1021/acsami.5b05703 | - |
dc.identifier.issn | 1944-8244 | - |
dc.identifier.scopusid | 2-s2.0-84944096209 | - |
dc.identifier.uri | https://scholarworks.unist.ac.kr/handle/201301/27130 | - |
dc.identifier.url | https://pubs.acs.org/doi/10.1021/acsami.5b05703 | - |
dc.identifier.wosid | 000362628900026 | - |
dc.language | 영어 | - |
dc.publisher | AMER CHEMICAL SOC | - |
dc.title | Effect of the Thermal Conductivity on Resistive Switching in GeTe and Ge2Sb2Te5 Nanowires | - |
dc.type | Article | - |
dc.description.isOpenAccess | FALSE | - |
dc.relation.journalWebOfScienceCategory | Nanoscience & Nanotechnology; Materials Science, Multidisciplinary | - |
dc.relation.journalResearchArea | Science & Technology - Other Topics; Materials Science | - |
dc.type.docType | Article | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.subject.keywordAuthor | Ge2Sb2Te5 | - |
dc.subject.keywordAuthor | GeTe | - |
dc.subject.keywordAuthor | phase-change memory | - |
dc.subject.keywordAuthor | thermal conductivity | - |
dc.subject.keywordAuthor | bipolar switching property | - |
dc.subject.keywordPlus | PHASE-CHANGE MEMORY | - |
dc.subject.keywordPlus | ELECTROMIGRATION | - |
dc.subject.keywordPlus | GRAPHENE | - |
dc.subject.keywordPlus | AMORPHIZATION | - |
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