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- Jeong, Hongsik
- Future Semiconductor Technology Lab.
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Investigation of an erasing method for synaptic behaviour in a phase change device using Ge1Cu2Te3 (GCT)
- Author(s)
- An, J. S., Choi, C. M., Shindo, Y., Sutou, Y., Jeong, H. S., Song, Y. H.
- Issued Date
- 2016-09
- Citation
- ELECTRONICS LETTERS, v.52, no.18, pp.1514 - 1515
- Abstract
- The gradual erasing operation from reset state to set state adjusting pulse amplitude, duration time and falling time respectively in phase change device using Ge1Cu2Te3 is investigated. For this procedure, a relatively high voltage and increased falling time, which was able to produce both long-term potential and long-term depression in the time interval between pre-spike and post-spike is choosing. The results suggested that the presence of synaptic behaviour was due to controlled falling time rather than pulse amplitude.
- Publisher
- INST ENGINEERING TECHNOLOGY-IET
- ISSN
- 0013-5194
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