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정홍식

Jeong, Hongsik
Future Semiconductor Technology Lab.
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dc.citation.startPage 955 -
dc.citation.title SCIENTIFIC REPORTS -
dc.citation.volume 7 -
dc.contributor.author Jeong, Kwangsik -
dc.contributor.author Park, Seungjong -
dc.contributor.author Park, Dambi -
dc.contributor.author Ahn, Min -
dc.contributor.author Han, Jeonghwa -
dc.contributor.author Yang, Wonjun -
dc.contributor.author Jeong, Hong-Sik -
dc.contributor.author Cho, Mann-Ho -
dc.date.accessioned 2023-12-21T22:18:05Z -
dc.date.available 2023-12-21T22:18:05Z -
dc.date.created 2019-07-11 -
dc.date.issued 2017-04 -
dc.description.abstract We investigated changes in the crystal structure of GeTe during its phase transition. Using density functional theory (DFT) calculations, four possible crystal structures were identified: R3m, P1, Cm, and Fm3m. Among these, P1 and Cm were examined here for the first time. By calculating the internal energy of the crystal volume change, we verified that P1, R3m, and Cm can coexist in crystalline GeTe. The X-ray diffraction spectra of annealed and laser-irradiated GeTe films revealed coexisting P1 or R3m and Cm. In addition, we confirmed that Cm transforms into P1 or R3m after laser irradiation. The presence of these new structures was revealed in the crystal Raman spectra. Many of the Raman peaks in the crystalized GeTe could be explained by the coexistence of various structures. By calculating the band gaps of these structures, we also found that a structural transformation induces a change in the crystal resistance, owing to differences in the band gaps of individual structures. The generation of new crystal structures suggests a facile phase change and instability during the structural transformation. -
dc.identifier.bibliographicCitation SCIENTIFIC REPORTS, v.7, pp.955 -
dc.identifier.doi 10.1038/s41598-017-01154-z -
dc.identifier.issn 2045-2322 -
dc.identifier.scopusid 2-s2.0-85018452469 -
dc.identifier.uri https://scholarworks.unist.ac.kr/handle/201301/27125 -
dc.identifier.url https://www.nature.com/articles/s41598-017-01154-z -
dc.identifier.wosid 000399536300011 -
dc.language 영어 -
dc.publisher NATURE PUBLISHING GROUP -
dc.title Evolution of crystal structures in GeTe during phase transition -
dc.type Article -
dc.description.isOpenAccess FALSE -
dc.relation.journalWebOfScienceCategory Multidisciplinary Sciences -
dc.relation.journalResearchArea Science & Technology - Other Topics -
dc.type.docType Article -
dc.description.journalRegisteredClass scie -
dc.description.journalRegisteredClass scopus -
dc.subject.keywordPlus BILBAO CRYSTALLOGRAPHIC SERVER -
dc.subject.keywordPlus ELECTRICAL-PROPERTIES -
dc.subject.keywordPlus ELECTRONIC-PROPERTIES -
dc.subject.keywordPlus RAMAN-SCATTERING -
dc.subject.keywordPlus BAND-STRUCTURE -

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