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DC Field | Value | Language |
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dc.citation.endPage | 131 | - |
dc.citation.number | 2 | - |
dc.citation.startPage | 127 | - |
dc.citation.title | NATURE PHYSICS | - |
dc.citation.volume | 13 | - |
dc.contributor.author | Jin, Chenhao | - |
dc.contributor.author | Kim, Jonghwan | - |
dc.contributor.author | Suh, Joonki | - |
dc.contributor.author | Shi, Zhiwen | - |
dc.contributor.author | Chen, Bin | - |
dc.contributor.author | Fan, Xi | - |
dc.contributor.author | Kam, Matthew | - |
dc.contributor.author | Watanabe, Kenji | - |
dc.contributor.author | Taniguchi, Takashi | - |
dc.contributor.author | Tongay, Sefaattin | - |
dc.contributor.author | Zettl, Alex | - |
dc.contributor.author | Wu, Junqiao | - |
dc.contributor.author | Wang, Feng | - |
dc.date.accessioned | 2023-12-21T22:39:20Z | - |
dc.date.available | 2023-12-21T22:39:20Z | - |
dc.date.created | 2019-07-17 | - |
dc.date.issued | 2017-02 | - |
dc.description.abstract | Engineering layer-layer interactions provides a powerful way to realize novel and designable quantum phenomena in van der Waals heterostructures(1-6). Interlayer electron-electron interactions, for example, have enabled fascinating physics that is difficult to achieve in a single material, such as the Hofstadter's butterfly in graphene/boron nitride (hBN) heterostructures(5-10). In addition to electron-electron interactions, interlayer electron-phonon interactions allow for further control of the physical properties of van der Waals heterostructures. Here we report an interlayer electron-phonon interaction in WSe2/hBN heterostructures, where optically silent hBN phonons emerge in Raman spectra with strong intensities through resonant coupling to WSe2 electronic transitions. Excitation spectroscopy reveals the double-resonance nature of such enhancement, and identifies the two resonant states to be the A exciton transition of monolayer WSe2 and a new hybrid state present only in WSe2/hBN heterostructures. The observation of an interlayer electron-phonon interaction could open up new ways to engineer electrons and phonons for device applications. | - |
dc.identifier.bibliographicCitation | NATURE PHYSICS, v.13, no.2, pp.127 - 131 | - |
dc.identifier.doi | 10.1038/NPHYS39280 | - |
dc.identifier.issn | 1745-2473 | - |
dc.identifier.uri | https://scholarworks.unist.ac.kr/handle/201301/27086 | - |
dc.identifier.url | https://www.nature.com/articles/nphys3928 | - |
dc.identifier.wosid | 000394070700016 | - |
dc.language | 영어 | - |
dc.publisher | NATURE PUBLISHING GROUP | - |
dc.title | Interlayer electron-phonon coupling in WSe2/hBN heterostructures | - |
dc.type | Article | - |
dc.description.isOpenAccess | FALSE | - |
dc.relation.journalWebOfScienceCategory | Physics, Multidisciplinary | - |
dc.relation.journalResearchArea | Physics | - |
dc.type.docType | Letter | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.subject.keywordPlus | HEXAGONAL BORON-NITRIDE | - |
dc.subject.keywordPlus | MOIRE SUPERLATTICES | - |
dc.subject.keywordPlus | DIRAC FERMIONS | - |
dc.subject.keywordPlus | FESE FILMS | - |
dc.subject.keywordPlus | GRAPHENE | - |
dc.subject.keywordPlus | SUPERCONDUCTIVITY | - |
dc.subject.keywordPlus | SRTIO3 | - |
dc.subject.keywordPlus | MOS2 | - |
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