There are no files associated with this item.
Full metadata record
DC Field | Value | Language |
---|---|---|
dc.citation.endPage | 74 | - |
dc.citation.number | 7750 | - |
dc.citation.startPage | 70 | - |
dc.citation.title | NATURE | - |
dc.citation.volume | 568 | - |
dc.contributor.author | Wang, Yan | - |
dc.contributor.author | Kim, Jong Chan | - |
dc.contributor.author | Wu, Ryan J. | - |
dc.contributor.author | Martinez, Jenny | - |
dc.contributor.author | Song, Xiuju | - |
dc.contributor.author | Yang, Jieun | - |
dc.contributor.author | Zhao, Fang | - |
dc.contributor.author | Mkhoyan, Andre | - |
dc.contributor.author | Jeong, Hu Young | - |
dc.contributor.author | Chhowalla, Manish | - |
dc.date.accessioned | 2023-12-21T19:14:49Z | - |
dc.date.available | 2023-12-21T19:14:49Z | - |
dc.date.created | 2019-04-18 | - |
dc.date.issued | 2019-04 | - |
dc.description.abstract | As the dimensions of the semiconducting channels in fieldeffect transistors decrease, the contact resistance of the metalsemiconductor interface at the source and drain electrodes increases, dominating the performance of devices(1-3). Two-dimensional (2D) transition-metal dichalcogenides such as molybdenum disulfide (MoS2) have been demonstrated to be excellent semiconductors for ultrathin field-effect transistors(4,5). However, unusually high contact resistance has been observed across the interface between the metal and the 2D transition-metal dichalcogenide(3,5-9). Recent studies have shown that van der Waals contacts formed by transferred graphene(10,11) and metals(12) on few-layered transitionmetal dichalcogenides produce good contact properties. However, van der Waals contacts between a three-dimensional metal and a monolayer 2D transition-metal dichalcogenide have yet to be demonstrated. Here we report the realization of ultraclean van der Waals contacts between 10-nanometre-thick indium metal capped with 100-nanometre-thick gold electrodes and monolayer MoS2. Using scanning transmission electron microscopy imaging, we show that the indium and gold layers form a solid solution after annealing at 200 degrees Celsius and that the interface between the gold-capped indium and the MoS2 is atomically sharp with no detectable chemical interaction between the metal and the 2D transition-metal dichalcogenide, suggesting van-der-Waals-type bonding between the gold-capped indium and monolayer MoS2. The contact resistance of the indium/gold electrodes is 3,000 +/- 300 ohm micrometres for monolayer MoS2 and 800 +/- 200 ohm micrometres for few-layered MoS2. These values are among the lowest observed for three-dimensional metal electrodes evaporated onto MoS2, enabling high-performance field-effect transistors with a mobility of 167 +/- 20 square centimetres per volt per second. We also demonstrate a low contact resistance of 220 +/- 50 ohm micrometres on ultrathin niobium disulfide (NbS2) and near-ideal band offsets, indicative of defect-free interfaces, in tungsten disulfide (WS2) and tungsten diselenide (WSe2) contacted with indium alloy. Our work provides a simple method of making ultraclean van der Waals contacts using standard laboratory technology on monolayer 2D semiconductors. | - |
dc.identifier.bibliographicCitation | NATURE, v.568, no.7750, pp.70 - 74 | - |
dc.identifier.doi | 10.1038/s41586-019-1052-3 | - |
dc.identifier.issn | 0028-0836 | - |
dc.identifier.scopusid | 2-s2.0-85063639201 | - |
dc.identifier.uri | https://scholarworks.unist.ac.kr/handle/201301/26745 | - |
dc.identifier.url | https://www.nature.com/articles/s41586-019-1052-3 | - |
dc.identifier.wosid | 000463384900041 | - |
dc.language | 영어 | - |
dc.publisher | NATURE PUBLISHING GROUP | - |
dc.title | Van der Waals contacts between three-dimensional metals and two-dimensional semiconductors | - |
dc.type | Article | - |
dc.description.isOpenAccess | FALSE | - |
dc.relation.journalWebOfScienceCategory | Multidisciplinary Sciences | - |
dc.relation.journalResearchArea | Science & Technology - Other Topics | - |
dc.type.docType | Letter | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.subject.keywordPlus | FIELD-EFFECT TRANSISTORS | - |
dc.subject.keywordPlus | MOS2 TRANSISTORS | - |
dc.subject.keywordPlus | RESISTANCE REDUCTION | - |
dc.subject.keywordPlus | WSE2 | - |
dc.subject.keywordPlus | LAYER | - |
dc.subject.keywordPlus | WS2 | - |
dc.subject.keywordPlus | GRAPHENE | - |
dc.subject.keywordPlus | TRANSPORT | - |
dc.subject.keywordPlus | BN | - |
Items in Repository are protected by copyright, with all rights reserved, unless otherwise indicated.
Tel : 052-217-1404 / Email : scholarworks@unist.ac.kr
Copyright (c) 2023 by UNIST LIBRARY. All rights reserved.
ScholarWorks@UNIST was established as an OAK Project for the National Library of Korea.