File Download
There are no files associated with this item.
SFX Link
- Find it @ UNIST can give you direct access to the published full text of this article. (UNISTARs only)
- Jeong, Hu Young
- UCRF Electron Microscopy group
Views & Downloads
Detailed Information
Cited time in 
Cited time in 
Cited time in
Metadata Downloads
Full metadata record
| DC Field | Value | Language |
|---|---|---|
| dc.citation.endPage | H982 | - |
| dc.citation.number | 10 | - |
| dc.citation.startPage | H979 | - |
| dc.citation.title | JOURNAL OF THE ELECTROCHEMICAL SOCIETY | - |
| dc.citation.volume | 158 | - |
| dc.contributor.author | Jeong, Hu Young | - |
| dc.contributor.author | Kim, Sung Kyu | - |
| dc.contributor.author | Lee, Jeong Yong | - |
| dc.contributor.author | Choi, Sung-Yool | - |
| dc.date.accessioned | 2023-12-22T06:07:05Z | - |
| dc.date.available | 2023-12-22T06:07:05Z | - |
| dc.date.created | 2013-10-04 | - |
| dc.date.issued | 2011-08 | - |
| dc.description.abstract | We investigated the effect of top metals on the bipolar resistive switching of Metal/amorphous TiO 2/Al devices to understand the role of interface chemical reaction between top metal electrode and titanium oxide layer. The Al device of the highest oxygen affinity showed superior memory performance to other devices, which can be attributed to fast formation of interfacial layer (Al-Ti-O), as confirmed by high resolution transmission electron microscopy and electron dispersive spectroscopy. We concluded that diffusion kinetics of the oxygen ions between top metal electrode and amorphous TiO 2 layer determine the device performance of Metal/amorphous TiO 2/Al as well as thermodynamics (Heat of formation). | - |
| dc.identifier.bibliographicCitation | JOURNAL OF THE ELECTROCHEMICAL SOCIETY, v.158, no.10, pp.H979 - H982 | - |
| dc.identifier.doi | 10.1149/1.3622295 | - |
| dc.identifier.issn | 0013-4651 | - |
| dc.identifier.scopusid | 2-s2.0-80052092308 | - |
| dc.identifier.uri | https://scholarworks.unist.ac.kr/handle/201301/2648 | - |
| dc.identifier.url | http://www.scopus.com/inward/record.url?partnerID=HzOxMe3b&scp=80052092308 | - |
| dc.identifier.wosid | 000294063000069 | - |
| dc.language | 영어 | - |
| dc.publisher | ELECTROCHEMICAL SOC INC | - |
| dc.title | Role of Interface Reaction on Resistive Switching of Metal/Amorphous TiO2/Al RRAM Devices | - |
| dc.type | Article | - |
| dc.description.isOpenAccess | FALSE | - |
| dc.relation.journalWebOfScienceCategory | Electrochemistry; Materials Science, Coatings & Films | - |
| dc.relation.journalResearchArea | Electrochemistry; Materials Science | - |
| dc.description.journalRegisteredClass | scie | - |
| dc.description.journalRegisteredClass | scopus | - |
| dc.subject.keywordAuthor | aluminium | - |
| dc.subject.keywordAuthor | diffusion | - |
| dc.subject.keywordAuthor | electrical conductivity transitions | - |
| dc.subject.keywordAuthor | heat of formation | - |
| dc.subject.keywordAuthor | random-access storage | - |
| dc.subject.keywordAuthor | surface chemistry | - |
| dc.subject.keywordAuthor | titanium compounds | - |
| dc.subject.keywordAuthor | transmission electron microscopy | - |
Items in Repository are protected by copyright, with all rights reserved, unless otherwise indicated.